Towards Scalable Electronics: Synthetic 2D Materials for Large-Area 2D Circuit Integration
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Carbon nanotubes are novel materials with unique electrical and mechanical properties. Here we present results on their atomic structure and mechanical properties in the adsorbed state, on ways to manipulate individual nanotubes, on their electrical proper ...
This thesis deals with the monolithic integration of long wavelength (1.3-1.55 µm) p-i-n photodiodes with HEMT field effect transistors for the realization of wide bandwidth OEIC receivers for lightwave communication systems. Part of this work was carried ...
We present the photo-Hall electrical properties of MBE-grown modulation-doped field-effect transistors (MODFET) structures using the so-called short-period superlattices (SPS) channel of InAs and GaAs instead of the standard InGaAs alloy channel. Photo-Hal ...
High-electron mobility transistors (HEMTs) were fabricated from heterostructures consisting of undoped In0.2Al0.8N barrier and GaN channel layers grown by metal-organic vapor phase epitaxy on (0001) sapphire substrates. The polarization-induced two-dimensi ...
In this work, we have modified a low-temperature thick-film system previously developed for aluminium and aluminium alloy substrates in order to adapt it to ferritic and austenitic stainless steel, and glass substrates, which, unlike the common alumina sub ...
In this work, a novel low-temperature thick-film system (dielectrics, resistors and conductors) is characterised for application on substrates, which cannot be exposed to the standard high-temperature 850 C thick-film firing cycle. Aluminium alloy sheets a ...
We analyze the transport through a narrow ballistic superconductor–normal-metal–superconductor Josephson contact with nonideal transmission at the superconductor–normal-metal interfaces, e.g., due to insulating layers, effective mass steps, or band misfits ...
We report on the growth and properties of GaN films grown on Si(111) substrates by molecular beam epitaxy using ammonia. The properties of the layers show that our growth procedure is very efficient in order to overcome the difficulties encountered during ...
Using the epitaxy-on electronics (EoE) process, self-electrooptic effect devices (SEED's) have been monolithically integrated with VLSI GaAs electronics., The EoE approach provides both depletion-mode and enhancement-mode MESFET's for large-scale, high-den ...
Using angle-resolved photoemission and linearly polarized synchrotron radiation, we measured the electronic band structure of electronic states of CuO2 plane materials ranging from insulators (Sr2CuO2Cl2) to overdoped superconductors (Bi2Sr2CaCu2O8+x). We ...