Optical properties of In(Ga)As/GaAs quantum dot-based devices emitting at 1.3[mu]m
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Quantum dots (QDs) are nanoscopic semiconductor crystals. Electronic transitions inside QDs lead to photon emission with unique properties. Photons can for instance be emitted as triggered single photons or as pairs of correlated photons with different ene ...
It was about 125 years ago that the light bulb was commercialized by Thomas Edison. No doubt a brilliant invention at the time, today its low power conversion efficiency is one of the reasons why lighting in the western world has such high energy consumpti ...
A theoretical description of photoacoustic spectroscopy generated by wavelength modulation of a semiconductor laser source is reported for a Lorentzian absorption line. This model describes the first- and second-harmonic photoacoustic signals produced by a ...
We demonstrate a new type of laser composed of an array of coupled photonic crystal nanocavities that enables high differential quantum efficiency and output power, together with a low threshold power comparable to those of single photonic crystal cavity l ...
We report here photoluminescence studies of multilayer InAs quantum dot structures grown by MOVPE on (001)-oriented GaAs substrates. AFM measurements reveal prolate shapes of the dots, oriented along the [1-10] direction. Different orientations relative to ...
The authors report a direct measurement of the optical phonon intersubband hole relaxation time in a SiGe heterostructure and a quantitative determination of hole relaxation under electrically active conditions. The results were obtained by femtosecond res ...
Rare-earth-ion doped KY(WO4)2 (hereafter KYW:RE) is a promising material for novel solid-state lasers. Its low laser threshold, high laser efficiency, and third-order nonlinear effects have stimulated research towards miniaturized thin-film waveguide laser ...
Very narrow spontaneous emission (Deltalambda similar to 0.5 nm), corresponding to a quality factor Q in excess of 800, has been obtained under continuous-wave excitation at room temperature with an AlInN/GaN monolithic microcavity. The structure is made o ...
We report here photoluminescence studies of multilayer InAs quantum dot structures grown by MOVPE on (001)-oriented GaAs substrates. AFM measurements reveal prolate shapes of the dots, oriented along the [1-10] direction. Different orientations relative to ...
We report the growth of highly reflective distributed Bragg reflectors (DBRs) in the UV region using the Al0.85In0.15N/Al0.2Ga0.8N lattice-matched system. The DBRs were deposited on nearly strain-free Al0.2Ga0.8N templates to avoid strain-induced structura ...