Optical properties of In(Ga)As/GaAs quantum dot-based devices emitting at 1.3[mu]m
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This device for measuring Brillouin scattering includes a single laser source (11), a modulator (12) placed on the path of the light emitted by the source (11) and designed to generate a pumping signal and a test signal which are injected to one end (13) o ...
A monolithically integrated displacement sensor has been fabricated in the GaAs/AlGaAs material system. The device is configured as a Michelson interferometer and consists of a DBR laser, a directional coupler, transparent waveguides and a photodetector. I ...
We investigate the dependence of four-wave mixing response on the photon energy close to the fundamental exciton (X) resonance in GaAs quantum wells. We find that cross-polarised incident fields give rise to a non-linear signal which decays faster at energ ...
Strained In0.35Ga0.65As/GaAs quantum wells of various thicknesses (6-16 monolayers) obtained by molecular beam epitaxy at 400 degrees C were studied by optical pumping techniques at 4 K. Improved quantum well optical properties, due to significant increase ...
Photoluminescence (PL), reflectivity and thermally-detected optical absorption (TDOA) experiments have been carried out, at liquid helium temperatures, On In0.35Ga0.65As/GaAs quantum wells (QWs) with different thicknesses of 4, 6, 8 and 10 monolayers (MLs) ...
We report on the realization of InGaAs-lnGaAsP separate confinement heterostructure multiple quantum well lasers grown by chemical beam epitaxy. We discuss key growth parameters and characterization by secondary-ion mass spectroscopy, transmission electron ...
We report on the enhancement of the photoluminescence (PL) intensity from a nanostructured organic material composed of nanosized aggregates of poly(para-phenylene) (PPP) in a polystyrene insulating matrix. In addition, the peak of the PL emission spectrum ...
We propose a simple quantum structure which exhibits resonant tunneling under one bias and simple tunneling under the opposite one, thus acting as a rectifier. The diode consists of a single laterally-indented barrier. Due to its particular conduction-band ...
A simple optoelectronic circuit integrated monolithically in GaAs to implement sigmoidal neuron responses is presented. The circuit integrates a light-emitting diode with one or two transistors and one or two photodetectors. The design considerations for b ...
We demonstrate a novel all-optical spatial Light modulator capable of megahertz modulation rates. It is based on the quantum-confined Stark effect, but the modulating electric field is entirely photogenerated by strongly asymmetric photocarrier transfer in ...