Nanoelectromechanical relayA nanoelectromechanical (NEM) relay is an electrically actuated switch that is built on the nanometer scale using semiconductor fabrication techniques. They are designed to operate in replacement of, or in conjunction with, traditional semiconductor logic. While the mechanical nature of NEM relays makes them switch much slower than solid-state relays, they have many advantageous properties, such as zero current leakage and low power consumption, which make them potentially useful in next generation computing.
AnodeAn anode is an electrode of a polarized electrical device through which conventional current enters the device. This contrasts with a cathode, an electrode of the device through which conventional current leaves the device. A common mnemonic is ACID, for "anode current into device". The direction of conventional current (the flow of positive charges) in a circuit is opposite to the direction of electron flow, so (negatively charged) electrons flow out the anode of a galvanic cell, into an outside or external circuit connected to the cell.
Boric acidBoric acid, more specifically orthoboric acid, is a compound of boron, oxygen, and hydrogen with formula . It may also be called hydrogen orthoborate, trihydroxidoboron or boracic acid. It is usually encountered as colorless crystals or a white powder, that dissolves in water, and occurs in nature as the mineral sassolite. It is a weak acid that yields various borate anions and salts, and can react with alcohols to form borate esters. Boric acid is often used as an antiseptic, insecticide, flame retardant, neutron absorber, or precursor to other boron compounds.
Semiconductor fabrication plantIn the microelectronics industry, a semiconductor fabrication plant (commonly called a fab; sometimes foundry) is a factory for semiconductor device fabrication. Fabs require many expensive devices to function. Estimates put the cost of building a new fab over one billion U.S. dollars with values as high as 3–4billionnotbeinguncommon.TSMCinvested9.3 billion in its Fab15 300 mm wafer manufacturing facility in Taiwan. The same company estimations suggest that their future fab might cost $20 billion. Ultra-high vacuumUltra-high vacuum (UHV) is the vacuum regime characterised by pressures lower than about . UHV conditions are created by pumping the gas out of a UHV chamber. At these low pressures the mean free path of a gas molecule is greater than approximately 40 km, so the gas is in free molecular flow, and gas molecules will collide with the chamber walls many times before colliding with each other. Almost all molecular interactions therefore take place on various surfaces in the chamber. UHV conditions are integral to scientific research.
Acid catalysisIn acid catalysis and base catalysis, a chemical reaction is catalyzed by an acid or a base. By Brønsted–Lowry acid–base theory, the acid is the proton (hydrogen ion, H+) donor and the base is the proton acceptor. Typical reactions catalyzed by proton transfer are esterifications and aldol reactions. In these reactions, the conjugate acid of the carbonyl group is a better electrophile than the neutral carbonyl group itself. Depending on the chemical species that act as the acid or base, catalytic mechanisms can be classified as either specific catalysis and general catalysis.
Potassium bitartratePotassium bitartrate, also known as potassium hydrogen tartrate, with formula KC4H5O6, is a byproduct of winemaking. In cooking, it is known as cream of tartar. It is processed from the potassium acid salt of tartaric acid (a carboxylic acid). The resulting powder can be used in baking or as a cleaning solution (when mixed with an acidic solution such as lemon juice or white vinegar). Potassium bitartrate was first characterized by Swedish chemist Carl Wilhelm Scheele (1742-1786).
Stress–strain curveIn engineering and materials science, a stress–strain curve for a material gives the relationship between stress and strain. It is obtained by gradually applying load to a test coupon and measuring the deformation, from which the stress and strain can be determined (see tensile testing). These curves reveal many of the properties of a material, such as the Young's modulus, the yield strength and the ultimate tensile strength. Generally speaking, curves representing the relationship between stress and strain in any form of deformation can be regarded as stress–strain curves.
Displacement currentIn electromagnetism, displacement current density is the quantity ∂D/∂t appearing in Maxwell's equations that is defined in terms of the rate of change of D, the electric displacement field. Displacement current density has the same units as electric current density, and it is a source of the magnetic field just as actual current is. However it is not an electric current of moving charges, but a time-varying electric field. In physical materials (as opposed to vacuum), there is also a contribution from the slight motion of charges bound in atoms, called dielectric polarization.
Chemical vapor depositionChemical vapor deposition (CVD) is a vacuum deposition method used to produce high-quality, and high-performance, solid materials. The process is often used in the semiconductor industry to produce thin films. In typical CVD, the wafer (substrate) is exposed to one or more volatile precursors, which react and/or decompose on the substrate surface to produce the desired deposit. Frequently, volatile by-products are also produced, which are removed by gas flow through the reaction chamber.
