Piezoelectric micromachined ultrasonic transducers based on PZT thin films
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Lead zirconate titanate (PZT) thin films on insulator-buffered silicon substrates with interdigitated electrodes (IDEs) have the potential to harvest more energy than parallel plate electrode (PPE) structures because the former exploit the longitudinal pie ...
Interdigitated electrode (IDE) systems with lead zirconate titanate (PZT) thin films play an increasingly important role for two reasons: first, such a configuration generates higher voltages than parallel plate capacitor-type electrode (PPE) structures, a ...
Institute of Electrical and Electronics Engineers2012
PZT thin films on insulator buffered silicon substrates with interdigitated electrodes (IDEs) have the potential to harvest more energy than parallel plate electrode (PPE) structures, because IDE structures exploit the longitudinal piezoelectric effect, wh ...
The continuous downscaling of microelectronic circuits combined with increasing interest in ferroelectric thin films for non-volatile random access memories (FeRAM) is drawing great attention to small ferroelectric thin film structures. There are various c ...
Integration of new functional materials into silicon microsystems is a key factor to enable technology for a wide range of innovative MEMS devices. Piezoelectric materials are of primary interest for integrating sensing and actuation functions in MEMS due ...
Pb(Zr, Ti)O-3 (PZT) is an interesting material for bulk acoustic wave resonator applications due to its high electromechanical coupling constant, which would enable fabrication of large bandwidth frequency filters. The major challenge of the PZT solid solu ...
Radio frequency (RF) filters based on bulk acoustic wave resonances in piezoelectric thin films have become indispensable components in mobile communications. The currently used material, AlN, exhibits many excellent properties for this purpose. However, i ...
Ferroelectrics are characterised by a spontaneous polarisation that can be reversed by an external electric field. The stability of the polarisation states and the possibility for controlled switching between the states render ferroelectric materials very ...
Pb(Zr-x, Ti1-x)O-3 (PZT) piezoelectric thin films are of major interest in MEMS technology for their ability to provide electro-mechanical coupling. In this work, the effective transverse piezoelectric coefficient e(31,f) of sol-gel processed films was inv ...
The development of wireless and mobile communication in the last decade led to the elaboration of new components based on thin films with continually increasing performance and reduced fabrication cost. A fundamental element for mobile communication is the ...