Nicolas Grandjean, Jean-François Carlin, Marcel Py, Lorenzo Lugani
Nonintentionally doped 200-nm-thick In0.16Al0.84N/n(+)-GaN samples were grown by metal-organic vapor phase epitaxy and used for the electrical characterization of InAlN. In the temperature range 180-400 K, the forward current of Schottky diodes is dominate ...
Amer Physical Soc2014