Concept

Procédé planar

Publications associées (42)

Silicon CMOS and InGaAs(P)/InP SPADs for NIR/SWIR detection

Applications demanding imaging at low-light conditions at near-infrared (NIR) and short-wave infrared (SWIR) wavelengths, such as quantum information science, biophotonics, space imaging, and light detection and ranging (LiDAR), have accelerated the develo ...

EPFL2024

Generation of entangled photon pairs from a silicon bichromatic photonic crystal cavity

Matteo Galli, Marco Clementi, Thanavorn Poempool

Integrated quantum photonics leverages the on-chip generation of nonclassical states of light to realize key functionalities of quantum devices. Typically, the generation of such nonclassical states relies on whispering gallery mode resonators, such as int ...

Melville2024

In Liquido Computation with Electrochemical Transistors and Mixed Conductors for Intelligent Bioelectronics

Matteo Cucchi, Eleni Stavrinidou

Next-generation implantable computational devices require long-term-stable electronic components capable of operating in, and interacting with, electrolytic surroundings without being damaged. Organic electrochemical transistors (OECTs) emerged as fitting ...

WILEY-V C H VERLAG GMBH2023

Kilowatt-range Picosecond Switching Based on Microplasma Devices

Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Armin Jafari

Plasma formation in micro- and nano-scales enables an ultrahigh-dv/dt picosecond switching in an integrated circuit form factor. Such on-chip plasma devices could provide a transformative approach to achieving high-power levels at very high frequencies, fa ...

2021

Nanoscale Study of the Hole-Selective Passivating Contacts with High Thermal Budget Using C-AFM Tomography

Christophe Ballif, Franz-Josef Haug, Quentin Thomas Jeangros, Gizem Nogay, Philipp Friedrich Hermann Löper, Martin Ledinsky

We investigate hole-selective passivating contacts that consist of an interfacial layer of silicon oxide (SiOx) and a layer of boron-doped SiCx(p). The fabrication process of these contacts involves an annealing step at temperatures above 750 degrees C whi ...

AMER CHEMICAL SOC2021

Fabrication of a Hydrogenated Amorphous Silicon Detector in 3-D Geometry and Preliminary Test on Planar Prototypes

Sylvain Dunand, Matthew James Large

Hydrogenated amorphous silicon (a-Si:H) can be produced by plasma-enhanced chemical vapor deposition (PECVD) of SiH4 (silane) mixed with hydrogen. The resulting material shows outstanding radiation hardness properties and can be deposited on a wide variety ...

2021

A round Robin-Highliting on the passivating contact technology

Franz-Josef Haug, Andrea Ingenito, Audrey Marie Isabelle Morisset, Aditya Chaudhary

The aim of this work is to demonstrate the maturity of the TOPCon technology by conducting a round-robin on symmetrically processed lifetime samples in the leading European PV institutes EPFL, ISC, CEA-INES, ISFH, IMEC and Fraunhofer ISE within the H2020 f ...

EDP SCIENCES S A2021

Plasma-enhanced atomic layer deposition of nickel nanotubes with low resistivity and coherent magnetization dynamics for 3D spintronics

Anna Fontcuberta i Morral, Dirk Grundler, Julien Gay, Simon Robert Escobar Steinvall, Maria Carmen Giordano

We report plasma-enhanced atomic layer deposition (ALD) to prepare conformal nickel thin films and nanotubes by using nickelocene as a precursor, water as the oxidant agent and an in-cycle plasma enhanced reduction step with hydrogen. The optimized ALD pul ...

2020

Crystal Phase Engineering in III-V Semiconductor Films: from Epitaxy to Devices

Philipp Staudinger

Crystal phase engineering is an exciting pathway to enhance the properties of conventional semiconductors. Metastable SiGe presents a direct band gap well suited for optical devices whereas wurtzite (WZ) phosphide alloys enable efficient light emission in ...

EPFL2020

Crystal Phase Tuning in Planar Films of III-V Semiconductors

Anna Fontcuberta i Morral, Kirsten Emilie Moselund, Nicolas Tappy

We report on the control of the crystal phase of micron-sized planar III-V semiconductor films grown on top of standard (001) oriented substrates. We achieve this by confining the MOCVD process using SiO2 templates and selecting specific growth planes. We ...

IEEE2019

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