Publications associées à Semiconductor memory

4T Gain-Cell with internal-feedback for ultra-low retention power at scaled CMOS nodes

Andreas Peter Burg, Adam Shmuel Teman, Robert Giterman, Pascal Andreas Meinerzhagen

Gain-Cell embedded DRAM (GC-eDRAM) has recently been recognized as a possible alternative to traditional SRAM. While GC-eDRAM inherently provides high-density, low-leakage, low-voltage, and 2-ported operation, its limited retention time requires periodic, ...

IEEE2014

The top-down fabrication of a 3D-integrated, fully CMOS-compatible FET biosensor based on vertically stacked SiNWs and FinFETs

Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia, Elizabeth Buitrago Godinez, Sara Rigante

A 3D vertically stacked silicon nanowire (SiNW) and Fin field effect transistor (FET) featuring a high density array (7 or 8 x 20 SiNWs, > 4 Fins vertically stacked) of fully depleted, ultra-thin (SiNWs diameters similar to 15-30 nm, Fin width/height fw si ...

Elsevier2014

Surface potential compact model for embedded flash devices oriented to IC memory design

Alexandre Schmid, Yusuf Leblebici, Davide Garetto

A surface potential-based model for embedded flash memory cells has been developed with the purpose of providing a comprehensive physical understanding of the device operation suitable for performance optimization in memory circuit design. The device equat ...

Pergamon-Elsevier Science Ltd2013

Nonvolatile Memory Cells Based on MoS2/graphene heterostructures

Andras Kis, Daria Krasnozhon, Simone Bertolazzi

Memory cells are an important building block of digital electronics. We combine here the unique electronic properties of semiconducting monolayer MoS2 with the high conductivity of graphene to build a 2D heterostructure capable of information storage. MoS2 ...

Amer Chemical Soc2013

Fast Crystallization of the Phase Change Compound GeTe by Large-Scale Molecular Dynamics Simulations

Giacomo Francesco Leonardo Miceli, Federico Giberti

Phase change materials are of great interest as active layers in rewritable optical disks and novel electronic nonvolatile memories. These applications rest on a fast and reversible transformation between the amorphous and crystalline phases upon heating, ...

Amer Chemical Soc2013

Design and Architectural Assessment of 3-D Resistive Memory Technologies in FPGAs

Giovanni De Micheli, Davide Sacchetto, Pierre-Emmanuel Julien Marc Gaillardon, Mohamed Haykel Ben Jamaa

Emerging Non-Volatile Memories (eNVMs) such as Phase-Change RAMs (PCRAMs) or Oxide-based Resistive RAMs (OxRRAMs) are promising candidates to replace Flash and Static Random Access Memories in many applications. This paper introduces a novel set of buildin ...

Institute of Electrical and Electronics Engineers2013

X-Stream: Edge-centric Graph Processing using Streaming Partitions

Willy Zwaenepoel, Amitabha Roy, Ivo Mihailovic

X-Stream is a system for processing both in-memory and out-of-core graphs on a single shared-memory machine. While retaining the scatter-gather programming model with state stored in the vertices, X-Stream is novel in (i) using an edge-centric rather than ...

ACM2013

A ReRAM-Based Non-Volatile Flip-Flop with Sub-VT Read and CMOS Voltage-Compatible Write

Giovanni De Micheli, Andreas Peter Burg, Davide Sacchetto, Pierre-Emmanuel Julien Marc Gaillardon, Pascal Andreas Meinerzhagen

The total power budget of Ultra-Low Power (ULP) VLSI Systems-on-Chip (SoCs) is often dominated by the leakage power of embedded memories and pipeline registers, which typically cannot be power-gated during sleep periods as they need to retain data and prog ...

2013

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Semiconductor memory

1T Capacitor-less DRAM cell based on asymmetric Tunnel FET design

4T Gain-Cell with internal-feedback for ultra-low retention power at scaled CMOS nodes

The top-down fabrication of a 3D-integrated, fully CMOS-compatible FET biosensor based on vertically stacked SiNWs and FinFETs

Surface potential compact model for embedded flash devices oriented to IC memory design

Nonvolatile Memory Cells Based on MoS2/graphene heterostructures

Using Managed Runtime Systems to Tolerate Holes in Wearable Memories

Fast Crystallization of the Phase Change Compound GeTe by Large-Scale Molecular Dynamics Simulations

Design and Architectural Assessment of 3-D Resistive Memory Technologies in FPGAs

X-Stream: Edge-centric Graph Processing using Streaming Partitions

A ReRAM-Based Non-Volatile Flip-Flop with Sub-VT Read and CMOS Voltage-Compatible Write

Graph Chatbot

Chattez avec Graph Search

Nonvolatile Memory Cells Based on MoS2/graphene heterostructures

Fast Crystallization of the Phase Change Compound GeTe by Large-Scale Molecular Dynamics Simulations

The top-down fabrication of a 3D-integrated, fully CMOS-compatible FET biosensor based on vertically stacked SiNWs and FinFETs

Design and Architectural Assessment of 3-D Resistive Memory Technologies in FPGAs

X-Stream: Edge-centric Graph Processing using Streaming Partitions

Surface potential compact model for embedded flash devices oriented to IC memory design

1T Capacitor-less DRAM cell based on asymmetric Tunnel FET design

4T Gain-Cell with internal-feedback for ultra-low retention power at scaled CMOS nodes

Using Managed Runtime Systems to Tolerate Holes in Wearable Memories

A ReRAM-Based Non-Volatile Flip-Flop with Sub-VT Read and CMOS Voltage-Compatible Write