Concept

Arséniure de gallium

Publications associées (549)

Silicon Heterojunction Solar Cells on Quasi-mono Wafers

Christophe Ballif, Antoine Descoeudres, Matthieu Despeisse, Mathieu Gérard Boccard, Loris Barraud, Jan Haschke, Raphaël Monnard, Brahim Aissa

We applied hydrogen passivation, gettering and a combination of both to quasi-mono (qm) wafer material to enhance its bulk lifetime and prepared silicon heterojunction (SHJ) solar cells. We find that while our applied hydrogen passivation alone seems not t ...

IEEE2018

Silicon Heterojunction Solar Cells on Quasi-mono Wafers

Christophe Ballif, Antoine Descoeudres, Matthieu Despeisse, Mathieu Gérard Boccard, Loris Barraud, Jan Haschke, Raphaël Monnard, Brahim Aissa

IEEE2018

Nearly perfect GaN crystal via pit-assisted growth by HVPE

Dmitry Mikulik

We demonstrated 5 mm-thick bulk gallium nitride (GaN) with nearly perfect crystal quality. To achieve this, intentional etch pit formation by in situ dry HCl etching and ex situ wet etching in H3PO4 solution was employed on freestanding GaN templates follo ...

Royal Soc Chemistry2017

Multilayer porous structures of HVPE and MOCVD grown GaN for photonic applications

Nicolas Grandjean, Jean-François Carlin, Denis Martin, Joachim Armand Simonne Ciers

In this paper we report on a comparative study of electrochemical processes for the preparation of multilayer porous structures in hydride vapor phase epitaxy (HVPE) and metal organic chemical vapor phase deposition (MOCVD) grown GaN. It was found that in ...

Academic Press Ltd- Elsevier Science Ltd2017

Multilayer porous structures on GaN for the fabrication of Bragg reflectors

Nicolas Grandjean, Jean-François Carlin, Denis Martin

We report on the development of electrochemical etching technology for the production of multilayer porous structures |(MPS) allowing one to fabricate Bragg reflectors on the basis of GaN bulk substrates grown by Hydride Vapor Phase Epitaxy |(HVPE). The fo ...

Spie-Int Soc Optical Engineering2017

The growth and optical properties of III-V nanostructures grown by Molecular Beam Epitaxy

Gözde Tütüncüoglu

This thesis is dedicated to the growth and characterization of the optoelectronic properties of III-V semiconductor nanostructures namely nanowires and nanoscale membranes. III-V semiconductors possess promising intrinsic properties like direct band gap, h ...

EPFL2017

Excitation and time resolved spectroscopy of SAW harmonics up to GHz regime in photolithographed GaAs devices

Pasquale Scarlino, Marco Scigliuzzo

In this work, we demonstrate the excitation of surface acoustic waves (SAW) harmonics up to GHz regime in photolitographed devices fabricated on gallium arsenide (GaAs) by acting on the IDT metallization ratio among the finger width and pitch. Specifically ...

2017

Modeling and Analysis for Thermal Management in Gallium Nitride HEMTs Using Microfluidic Cooling

Gunjan Agarwal

In this paper, thermal management in GaN (gallium nitride) based microelectronic devices is addressed using microfluidic cooling. Numerical modeling is done using finite element analysis (FEA), and the results for temperature distribution are presented for ...

American Society of Mechanical Engineers2017

The investigation of stress in freestanding GaN crystals grown from Si substrates by HVPE

Dmitry Mikulik

We investigate the stress evolution of 400 mu m-thick freestanding GaN crystals grown from Si substrates by hydride vapour phase epitaxy (HVPE) and the in situ removal of Si substrates. The stress generated in growing GaN can be tuned by varying the thickn ...

Nature Publishing Group2017

Ordered nanostructures on silicon substrates

Jelena Vukajlovic Plestina

Silicon is today the main material used in electronics. It is a very advanced and mature technology. It is therefore clear that new technological concepts and materials should be introduced through the integration on the silicon platform. III-V semiconduct ...

EPFL2017

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