Publications associées à Arséniure de gallium

Effect of Cooling Press on the Optical Transmission through Photovoltaic Encapsulants

Christophe Ballif, Hengyu Li, Laure-Emmanuelle Perret Aebi, Yun Luo

In certain laminators for poly (ethylene-co-vinyl acetate) (EVA) encapsulation process of photovoltaic modules, cooling press (CP) is applied to the module after encapsulation. Here, the effect of CP on the optical transmission through common PV encapsulan ...

Taylor & Francis Inc2015

Highly transparent modulated surface textured front electrodes for high-efficiency multijunction thin-film silicon solar cells

Christophe Ballif, Franz-Josef Haug, Michael Elias Stückelberger, Etienne Antoine Julien Moulin, Hairen Tan

To further increase the efficiency of multijunction thin-film silicon (TF-Si) solar cells, it is crucial for the front electrode to have a good transparency and conduction, to provide efficient light trapping for each subcell, and to ensure a suitable morp ...

Wiley-Blackwell2015

Analysis of the Atomic Layer Deposited Al2O3 field-effect passivation in black silicon

Anna Fontcuberta i Morral, Sonia Conesa Boj

We demonstrate that n-type black silicon can be passivated efficiently using Atomic Layer Deposited (ALD) Al2O3, reaching maximum surface recombination velocities below 7 cm/s. We show that the low surface recombination velocity results from a higher sensi ...

Elsevier2015

Self-aligned normally-off metal-oxide-semiconductor n(++)GaN/InAlN/GaN high electron mobility transistors

Nicolas Grandjean, Jean-François Carlin

Self-aligned normally-off n(++)GaN/InAlN/AlN/GaN MOS HEMTs with a recessed gate show scalable threshold voltage between 1.3 to 3.7V, which increases with the gate oxide thickness. Al2O3 or HfO2 gate insulators were grown by ALD at 100 degrees C so that one ...

Wiley-V C H Verlag Gmbh2015

Peritectic reaction on the Al-rich side of Al-Cr system

Michel Rappaz, Güven Kurtuldu

A long lasting controversy on the nature of the reaction between liquid, Al and Al45Cr7 has been ended by planar front solidification experiments of Al-Cr alloy in a Bridgman furnace. Cr depletion in the liquid ahead of the quenched planar interface proves ...

Elsevier2015

An ultra-low temperature scanning Hall probe microscope for magnetic imaging below 40 mK

Henrik Moodysson Rønnow, Julian Piatek

We describe the design of a low temperature scanning Hall probe microscope (SHPM) for a dilution refrigerator system. A detachable SHPM head with 25.4 mm OD and 200 mm length is integrated at the end of the mixing chamber base plate of the dilution refrige ...

American Institute of Physics2014

A 270×1 Ge-on-Si photodetector array for sensitive infrared imaging

Edoardo Charbon, Mahdi Aminian, Lin Qi

A CMOS compatible Ge photodetector (Ge-PD) fabricated on Si substrates has been shown to be suitable for near infrared (NIR) sensing; linear and avalanche detection, in both proportional and Geiger modes have been demonstrated, for photon counting at room ...

2014

M-Plane GaN/InAlN Multiple Quantum Wells in Core-Shell Wire Structure for UV Emission

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Georg Rossbach

We report on the epitaxial growth of high-quality core-shell nonpolar m-plane GaN/InAlN multiple quantum wells (MQWs) on the sidewall facets of c-oriented hexagonal GaN wires. Pseudomorphic growth without generation of threading dislocations has been estab ...

Amer Chemical Soc2014

Ga-assisted growth of GaAs nanowires on silicon, comparison of surface SiOx of different nature

Anna Fontcuberta i Morral, Federico Matteini, Esther Alarcon Llado

Physical properties of surfaces are extremely important for initiation and nucleation of crystal growth, including nanowires. In recent years, fluctuations in surface characteristics have often been related to unreproducible growth of GaAs nanowires on Si ...

Elsevier2014

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Arséniure de gallium

Optically active quantum dots in bottom-up nanowires

Effect of Cooling Press on the Optical Transmission through Photovoltaic Encapsulants

Highly transparent modulated surface textured front electrodes for high-efficiency multijunction thin-film silicon solar cells

Analysis of the Atomic Layer Deposited Al2O3 field-effect passivation in black silicon

Self-aligned normally-off metal-oxide-semiconductor n(++)GaN/InAlN/GaN high electron mobility transistors

Peritectic reaction on the Al-rich side of Al-Cr system

An ultra-low temperature scanning Hall probe microscope for magnetic imaging below 40 mK

A 270×1 Ge-on-Si photodetector array for sensitive infrared imaging

M-Plane GaN/InAlN Multiple Quantum Wells in Core-Shell Wire Structure for UV Emission

Ga-assisted growth of GaAs nanowires on silicon, comparison of surface SiOx of different nature

Graph Chatbot

Chattez avec Graph Search

M-Plane GaN/InAlN Multiple Quantum Wells in Core-Shell Wire Structure for UV Emission

Effect of Cooling Press on the Optical Transmission through Photovoltaic Encapsulants

Optically active quantum dots in bottom-up nanowires

Ga-assisted growth of GaAs nanowires on silicon, comparison of surface SiOx of different nature

Analysis of the Atomic Layer Deposited Al2O3 field-effect passivation in black silicon

Highly transparent modulated surface textured front electrodes for high-efficiency multijunction thin-film silicon solar cells

Self-aligned normally-off metal-oxide-semiconductor n(++)GaN/InAlN/GaN high electron mobility transistors

Peritectic reaction on the Al-rich side of Al-Cr system

A 270×1 Ge-on-Si photodetector array for sensitive infrared imaging

An ultra-low temperature scanning Hall probe microscope for magnetic imaging below 40 mK