Concept

Lithographie extrême ultraviolet

Publications associées (318)

Metal Double Layers with Sub-10 nm Channels

Olivier Martin, Thomas Gerd Siegfried, Li Wang

Double-layer plasmonic nanostructures are fabricated by depositing metal at normal incidence onto various resist masks, forming an antenna layer on top of the resist post and a hole layer on the substrate. Antenna plasmon resonances are found to couple to ...

Amer Chemical Soc2014

Bloch surface waves, a 2D platform for planar optical integration

Hans Peter Herzig, Elsie Barakat, Libo Yu, Richa Dubey

A novel platform suitable for fundamental investigations of light propagation through micro-and nanostructures will be discussed. This platform is based on a dielectric multilayer that sustains Bloch surface waves (BSWs). BSWs are electromagnetic surface w ...

Ieee2014

BSIM6: Analog and RF Compact Model for Bulk MOSFET

Christian Enz, Yogesh Singh Chauhan, Maria-Anna Chalkiadaki, Sourabh Khandelwal

BSIM6 is the latest industry-standard bulk MOSFET model from the BSIM group developed specially for accurate analog and RF circuit designs. The popular real-device effects have been brought from BSIM4. The model shows excellent source-drain symmetry during ...

Institute of Electrical and Electronics Engineers2014

A Die-Level Post-CMOS Processing Protocol for Multi-Layer 3D Integration

Davide Sacchetto, Seniz Esra Küçük, Yusuf Leblebici, Clemens Benedict Nyffeler

In this work, a chip-level post-CMOS processing protocol for 3D integration is presented to achieve multilayer stacking. This protocol includes TSV formation on the top chip, bonding the chips on top of each other, and finally the electrical connection pro ...

2014

A High-Efficiency Nonuniform Grating Coupler Realized With 248-nm Optical Lithography

Christophe Marcel Georges Galland, Yang Liu

We describe a high-efficiency grating coupler (GC) fabricated on a silicon-on-insulator wafer with 220 nm top silicon layer. One single 60 nm shallow etch is required to define the diffractive gratings with a minimum lithographic feature size of 180 nm, wh ...

Institute of Electrical and Electronics Engineers2013

Gap Plasmons and Near-Field Enhancement in Closely Packed Sub-10 nm Gap Resonators

Olivier Martin, Thomas Gerd Siegfried

Pairs of metal nanoparticles with a sub-10 nm gap are an efficient way to achieve extreme near-field enhancement for sensing applications. We demonstrate an attractive alternative based on Fabry-Perot type nanogap resonators, where the resonance is defined ...

Amer Chemical Soc2013

Reusable plasmonic substrates fabricated by interference lithography: a platform for systematic sensing studies

Olivier Martin, Thomas Gerd Siegfried

Surface-enhanced Raman scattering (SERS) has become increasingly popular in the scientific and industrial communities because of its analytical capabilities and potential to study fundamentals in plasmonics. Although under certain conditions extremely high ...

Wiley-Blackwell2013

Batch fabrication of gold-gold nanogaps by E-beam lithography and electrochemical deposition

Nico de Rooij, Terunobu Akiyama, Sebastian Gautsch, Yexian Wu

We report on the successful development of a well-controlled two-step batch nano-fabrication process to achieve nanometer-size gaps at the wafer scale. The technique is based on an optimized electron-beam lithography process, which enables the fabrication ...

Institute of Physics2013

A CMOS-Compatible, Low-Loss, and Low-Crosstalk Silicon Waveguide Crossing

Yi Zhang, Christophe Marcel Georges Galland

We demonstrated a waveguide crossing for submicron silicon waveguides with average insertion loss of 0.18±0.03 dB and crosstalk of -41±2 dB, uniform across an 8-inch wafer. The device was fabricated in a CMOS-compatible process using 248 nm lithography, wi ...

Institute of Electrical and Electronics Engineers2013

Photocatalytic Nanolithography of Self-Assembled Monolayers and Proteins

Esther Amstad

Self-assembled monolayers of alkylthiolates on gold and alkylsilanes on silicon dioxide have been patterned photocatalytically on sub-100 nm length-scales using both apertured near-field and apertureless methods. Apertured lithography was carried out by me ...

American Chemical Society2013

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