Publications associées à Diode Schottky

Polarization-enhanced GaN Schottky barrier diodes: Ultra-thin InGaN for high breakdown voltage and low Ron

Elison de Nazareth Matioli, Alessandro Floriduz, Zheng Hao

In this work, we present a concept that leverages the strong piezoelectric polarization field in InGaN, which counteracts the external electric field at reverse bias. We show that despite the smaller InGaN band-gap and lower critical electric field, its st ...

2024

Impact of beam-coupling impedance on the Schottky spectrum of bunched beam

Tatiana Pieloni, Nicolas Frank Mounet, Christophe Emmanuel R. Lannoy

The Schottky monitors of the Large Hadron Collider (LHC) can be used for non-invasive beam diagnostics to estimate various bunch characteristics, such as tune, chromaticity, bunch profile or synchrotron frequency distribution. However, collective effects, ...

Iop Publishing Ltd2024

SPAD Developed in 55 nm Bipolar-CMOS-DMOS Technology Achieving Near 90% Peak PDP

Edoardo Charbon, Claudio Bruschini, Ekin Kizilkan, Pouyan Keshavarzian, Won Yong Ha, Francesco Gramuglia, Myung Jae Lee

We present a single-photon avalanche diode (SPAD) developed in 55 nm bipolar-CMOS-DMOS (BCD) technology, which achieves high photon detection probability (PDP) while its breakdown voltage is lower than 20 V. To enhance the PDP performance, the SPAD junctio ...

Ieee-Inst Electrical Electronics Engineers Inc2024

A thermotropic liquid crystal enables efficient and stable perovskite solar modules

Mohammad Khaja Nazeeruddin, Yong Ding, Bin Ding, Cheng Liu, Jian Xu

Perovskite solar cells have seen impressive progress in performance and stability, yet maintaining efficiency while scaling area remains a challenge. Here we find that additives commonly used to passivate large-area perovskite films often co-precipitate du ...

Berlin2024

Demonstration of a Plasmonic Nonlinear Pseudodiode

Olivier Martin, Karim Achouri, Andrei Kiselev, Sergejs Boroviks

We demonstrate a nonlinear plasmonic metasurface that exhibits strongly asymmetric second-harmonic generation: nonlinear scattering is efficient upon excitation in one direction, and it is substantially suppressed when the excitation direction is reversed, ...

AMER CHEMICAL SOC2023

Enablers for Overcurrent Capability of Silicon-Carbide-Based Power Converters: An Overview

Elison de Nazareth Matioli

With the increase in penetration of power electronic converters in the power systems, a demand for overcurrent/ overloading capability has risen for the fault clearance duration. This article gives an overview of the limiting factors and the recent technol ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2023

Method for operating a frequency agile tunable self-injection locking laser system and self-injection locking laser system

Tobias Kippenberg, Anat Siddharth, Grigorii Likhachev

The invention relates to a Method for operating a frequency agile tunable self-injection locking laser system being formed by a laser device coupled to at least one optical resonator, wherein a diode current of a laser diode of the laser device is controll ...

2023

Modeling the electrical characteristic of InGaN/GaN blue-violet LED structure under electrical stress

Nicolas Grandjean, Jean-François Carlin, Camille Haller

The role of deep defects and their physical origin in InGaN/GaN LED are still widely investigated and debated, in particular their impact on the electrical and optical characteristics and on the reliability of the device. In this paper we evaluate the elec ...

PERGAMON-ELSEVIER SCIENCE LTD2022

Electric metal contacts to monolayer blue phosphorus: electronic and chemical properties

Xiao Zhou, Cheng Chen, Pengfei Ou

The contact nature when monolayer blue phosphorus (blueP) interfaces with three transition metal electrodes (i. e., Pd, Ir, and Pt) was unraveled by the ab initio density functional theory calculations. Specifically, n-type Schottky contact is observed for ...

ELSEVIER2022

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Diode Schottky

Polarization-enhanced GaN Schottky barrier diodes: Ultra-thin InGaN for high breakdown voltage and low Ron

Impact of beam-coupling impedance on the Schottky spectrum of bunched beam

SPAD Developed in 55 nm Bipolar-CMOS-DMOS Technology Achieving Near 90% Peak PDP

A thermotropic liquid crystal enables efficient and stable perovskite solar modules

Demonstration of a Plasmonic Nonlinear Pseudodiode

Enablers for Overcurrent Capability of Silicon-Carbide-Based Power Converters: An Overview

Method for operating a frequency agile tunable self-injection locking laser system and self-injection locking laser system

Charge sensing properties ofmonolithic CMOS pixel sensors fabricated in a 65 nm technology

Modeling the electrical characteristic of InGaN/GaN blue-violet LED structure under electrical stress

Electric metal contacts to monolayer blue phosphorus: electronic and chemical properties

Graph Chatbot

Chattez avec Graph Search

Polarization-enhanced GaN Schottky barrier diodes: Ultra-thin InGaN for high breakdown voltage and low Ron

A thermotropic liquid crystal enables efficient and stable perovskite solar modules

SPAD Developed in 55 nm Bipolar-CMOS-DMOS Technology Achieving Near 90% Peak PDP

Charge sensing properties ofmonolithic CMOS pixel sensors fabricated in a 65 nm technology

Enablers for Overcurrent Capability of Silicon-Carbide-Based Power Converters: An Overview

Electric metal contacts to monolayer blue phosphorus: electronic and chemical properties

Impact of beam-coupling impedance on the Schottky spectrum of bunched beam

Modeling the electrical characteristic of InGaN/GaN blue-violet LED structure under electrical stress

Demonstration of a Plasmonic Nonlinear Pseudodiode

Method for operating a frequency agile tunable self-injection locking laser system and self-injection locking laser system