Concept

Câble électrique à haute tension

Publications associées (149)

Terminal Characteristics Measurements and Analysis of the Three-Phase Active Front End Converter Building Block

The safe and reliable operation of modern power system imposes the need to describe and estimate the system stability through impedance-admittance measurement and identification. The integration and operation of medium voltage equipment in existing infrast ...

2021

Ultra-High-Voltage (7-kV) Bidirectional Flyback Converter Used to Drive Capacitive Actuators

Yves Perriard, Alexis Boegli, Morgan Almanza, Raphaël Johannes Charles Mottet, Lucas Pniak

Dielectric elastomer actuators (DEAs) have extremely advantageous characteristics such as lightness, compactness, flexibility, and large displacements. However, in order to operate, they can require voltages in the order of several thousands of volts. Thus ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2021

High-Performance Enhancement-Mode AlGaN/GaN Multi-Channel Power Transistors

Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Halil Kerim Yildirim, Jun Ma, Luca Nela, Catherine Erine

AlGaN/GaN devices have shown outstanding potential for power conversion applications. However, despite the recent progress, their performance is still far from what the material can offer in terms of on-resistance and breakdown voltage. To address this cha ...

IEEE2021

LiNiO Gate Dielectric with Tri-Gate Structure for High Performance E-mode GaN transistors

Elison de Nazareth Matioli, Luca Nela, Taifang Wang

In this work, a Tri-Gate AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (MOSHEMT) with lithium nickel oxide (LiNiO) gate dielectric is demonstrated for enhancement-mode (e-mode) operation. The high-quality of pulse-laser-deposited (P ...

IEEE2021

p-NiO junction termination extensions for GaN power devices

Elison de Nazareth Matioli, Alessandro Floriduz, Riyaz Mohammed Abdul Khadar, Taifang Wang

We report the demonstration of p-NiO layers as junction termination extensions (JTEs) for realizing high-performance GaN power devices. The p-NiO was deposited by RF sputtering, a flexible process which enables to achieve high hole densities. In this work, ...

IOP PUBLISHING LTD2021

p-NiO Junction Termination Extensions for High Voltage Vertical GaN Devices

Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Alessandro Floriduz, Pirouz Sohi, Luca Nela, Riyaz Mohammed Abdul Khadar, Catherine Erine, Taifang Wang

In this paper, we illustrate the use of RF-sputtered p-NiO to fabricate Junction Termination Extensions (JTEs) for high-performance vertical GaN-on-Si Schottky Barrier Diodes (SBDs). The GaN epitaxial structures were grown on 6-inch Si wafers by MOCVD. The ...

IEEE2021

Green processing and biotechnological potential of grape pomace: Current trends and opportunities for sustainable biorefinery

Edgard Gnansounou, Ranjna Sirohi

Grape pomace is a high quality biodegradable residue of the winery industry. It is comprised of grape seed, skin and stalks, and is blessed with substantial quantities of phenols, flavonoids and anthocyanins with high antioxidant potential. Currently, ther ...

ELSEVIER SCI LTD2020

Hardware-in-the-Loop Characterization of Source-Affected Output Characteristics of Cascaded H-Bridge Converter

Drazen Dujic, Marko Petkovic

Recent trends in power system design such as an increasing share of renewable energy sources and integration of power electronics equipment for medium voltage applications are creating different subsystem interactions that require proper investigation, und ...

2020

Analysis of the Effectiveness of the Series Inductor Integration Into the MFT for SST Applications

Drazen Dujic, Marko Mogorovic

This paper analyzes the effectiveness of the integration of the series inductor into the medium frequency transformer used for series resonant or dual active bridge converters - galvanically isolated DC-DC converters for high-power medium-voltage (solid st ...

2020

Towards the material limit and field concentration smoothing in multilayer dielectric elastomer actuators

Yves Perriard, Yoan René Cyrille Civet, Jonathan André Jean-Marie Chavanne, Morgan Almanza

Performance of dielectric elastomer actuators is closely related to its breakdown field. On the other hand, to enhance the available energy, multilayer configuration is needed to increase the amount of active material. However, multilayer configuration suf ...

IOP PUBLISHING LTD2020

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