Publications associées à Interrupteur

Underlap counterdoping as an efficient means to suppress lateral leakage in the electron–hole bilayer tunnel FET

Mihai Adrian Ionescu, Cem Alper, José Luis Padilla de la Torre, Pierpaolo Palestri

The electron-hole bilayer tunnel (EHBTFET). has been proposed as a density of states (DOS) switch capable of achieving a subthreshold slope lower than 60mV/decade at room temperature; however, one of the main challenges is the control of the lateral band-t ...

Institute of Physics2016

Exploring Nanoscale Electrical Properties of CuO-Graphene Based Hybrid Interfaced Memory Device by Conductive Atomic Force Microscopy

Jürgen Brugger, Andreea Veronica Savu

The phenomenon of resistive switching is based on nanoscale changes in the electrical properties of the interface. In the present study, conductive atomic force microscope based nanoscale measurements of copper oxide (CuO)-multilayer graphene (MLG) hybrid ...

Amer Scientific Publishers2016

Control of the Actively Balanced Capacitive Voltage Divider for a Five-Level NPC Inverter - Estimation of the Intermediary Levels Currents

Alfred Rufer, Nicolas Cherix, Nelson William Koch

This article addresses the control of a Multistage Stacked Boost Architecture (MSBA) feeding a five-level NPC inverter in a grid-tied application. A suitable control strategy was previously presented, in which estimated/reconstructed intermediary currents ...

2016

Effect of Hf Metal Layer on the Switching Characteristic of HfOX-based Resistive Random Access Memory

Elmira Shahrabi, Yusuf Leblebici, Jury Sandrini, Behnoush Attarimashalkoubeh, Marios Barlas

In this study, we propose the insertion of an ultrathin Hf layer at the interface between TiN (top electrode) and HfOX (electrolyte), and then studied its effect on the device electrical properties. In order to obtain the desired switching characteristics, ...

Ieee2016

Scalable Row/Column Addressing of Silicon Photonic MEMS Switches

Niels Quack

In this letter, we demonstrate a scalable addressing scheme for silicon photonic MEMS switches. For a crossbar architecture switch fabric of dimension N x N, the row/column addressing scales with 2 . N electrodes, much reduced from the N-2 electrodes in in ...

Institute of Electrical and Electronics Engineers2016

Scalable Row/Column Addressing of Silicon Photonic MEMS Switches

Niels Quack

Ieee-Inst Electrical Electronics Engineers Inc2016

Chip-Level CMOS Co-Integration of ReRAM-Based Non-Volatile Memories

Elmira Shahrabi, Yusuf Leblebici, Jury Sandrini, Tugba Demirci, Mahmoud Hadad, Behnoush Attarimashalkoubeh

This work reports a technique to fabricate ReRAM crossbar arrays co-integrated with fully finished 180 nm CMOS technology chips. The proposed integration method enables low- cost ReRAM-CMOS integration and allows the rapid prototyping of complete memory sy ...

Ieee2016

Highly Scalable Digital Silicon Photonic MEMS Switches

Niels Quack

Optical circuit switches with fast switching times can provide rapidly reconfigurable bandwidth in data center networks. Silicon photonic switches are attractive candidates with their fast response times and CMOS process compatibility. In this paper, we re ...

Institute of Electrical and Electronics Engineers2015

Steep-slope Metal-Insulator-Transition VO2 Switches with Temperature-Stable High ION

Mihai Adrian Ionescu, Clara-Fausta Moldovan, Josef Andreas Schuler, Michele Tamagnone, Wolfgang Amadeus Vitale, Antonio Paone

This work reports a detailed experimental investigation of the slope of the current switching between OFF and ON states exploiting the metal-insulator-transition in vanadium dioxide devices. The reported devices are CMOS compatible 2-terminal switches. We ...

Institute of Electrical and Electronics Engineers2015

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Interrupteur

Underlap counterdoping as an efficient means to suppress lateral leakage in the electron–hole bilayer tunnel FET

Exploring Nanoscale Electrical Properties of CuO-Graphene Based Hybrid Interfaced Memory Device by Conductive Atomic Force Microscopy

Control of the Actively Balanced Capacitive Voltage Divider for a Five-Level NPC Inverter - Estimation of the Intermediary Levels Currents

Effect of Hf Metal Layer on the Switching Characteristic of HfOX-based Resistive Random Access Memory

Scalable Row/Column Addressing of Silicon Photonic MEMS Switches

Scalable Row/Column Addressing of Silicon Photonic MEMS Switches

Chip-Level CMOS Co-Integration of ReRAM-Based Non-Volatile Memories

Highly Scalable Digital Silicon Photonic MEMS Switches

Steep-slope Metal-Insulator-Transition VO2 Switches with Temperature-Stable High ION

Electronic and magnetic interactions in single molecular and atomic contacts

Graph Chatbot

Chattez avec Graph Search

Scalable Row/Column Addressing of Silicon Photonic MEMS Switches

Exploring Nanoscale Electrical Properties of CuO-Graphene Based Hybrid Interfaced Memory Device by Conductive Atomic Force Microscopy

Effect of Hf Metal Layer on the Switching Characteristic of HfOX-based Resistive Random Access Memory

Scalable Row/Column Addressing of Silicon Photonic MEMS Switches

Electronic and magnetic interactions in single molecular and atomic contacts

Underlap counterdoping as an efficient means to suppress lateral leakage in the electron–hole bilayer tunnel FET

Chip-Level CMOS Co-Integration of ReRAM-Based Non-Volatile Memories

Highly Scalable Digital Silicon Photonic MEMS Switches

Control of the Actively Balanced Capacitive Voltage Divider for a Five-Level NPC Inverter - Estimation of the Intermediary Levels Currents

Steep-slope Metal-Insulator-Transition VO2 Switches with Temperature-Stable High ION