Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.
AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.
Gate and drain-lag effects are studied in (GaN)/InAlN/GaN and InAlN/AlN/GaN HEMTs grown on sapphire. Electron trapping on the surface states between the gate and the drain forming the net negative charge up-to similar to 2 x 10(13) cm(-2) is found to be re ...
An experimental demonstration of a set of optical logic gates (OR, XOR, AND) is shown using non-linear mixing in a BBO crystal. Pulses generated by a femtosecond Ti:Sapphire laser at 800 nm (140 fs duration, 2nJ/pulse) are split in 4 beams evenly separated ...
Spie-Int Soc Optical Engineering, Po Box 10, Bellingham, Wa 98227-0010 Usa1999
Tree structures for computing orthogonal transforms are introduced. Two cases, delay trees and decimation trees, are investigated. A simple condition, namely the orthogonality of branches with a common root, is shown to be necessary and sufficient for the ...
We report fast modulation (>30 GHz) in a SOI resonant cavity using integrated Bragg mirrors and a gate-all-around transistor as active element. Modulation depth >90% can be obtained in 12.5 μm long devices. ...
Using the Landauer-Büttiker formalism, we study ballistic transport properties of an interface between a ferromagnetic metal and a mesoscopic two-dimensional electron system in a III-V semiconductor. We show that in a Sharvin point contact spin-filtering o ...
We present the results of our calculation of the effects of dynamical coupling of a charge carrier to the electronic polarization and the field-induced lattice displacements at the gate interface of an organic field-effect transistor (OFET). We find that t ...
We present a new concept for fluorescence lifetime imaging (FLIM) based on time-resolved Hadamard imaging (HI). HI allows image acquisition by use of one single-point detector without requiring a moving scanning stage. Moreover, it reduces the influence of ...
We fabricated field-effect transistors based on individual single- and multi-wall carbon nanotubes and analyzed their performance. Transport through the nanotubes is dominated by holes and, at room temperature, it appears to be diffusive rather than ballis ...
We present a comparative study, at 300 K and at low longitudinal field, of the DC characteristics and the low-frequency noise in the drain current of GaAs/AlGaAs MODFETs which, ideally, differ only by the doping mode of the AlGaAs layer. The higher 1/f-lik ...
