Concept

Silicène

Publications associées (226)

The Importance of Grain Boundaries for the Time-Dependent Mobility Degradation in Organic Thin-Film Transistors

Klaus Kern, Hagen Klauk, Marko Burghard, Ralf Thomas Weitz

The relationships between organic semiconductor morphology and device stability of organic field-effect transistors (FETs) are very complex and not yet fully understood. Especially For obtaining high-performance, air-stable n-channel FETs, gaining a deep i ...

2009

Asymmetrically strained all-silicon Tunnel FETs featuring 1V operation

Mihai Adrian Ionescu, Katherine Boucart, Walter Riess

This paper reports all-silicon asymmetrically strained Tunnel FET architectures that feature improved subthreshold swing and Ion/I off characteristics. We demonstrate that a lateral strain profile with a maximum of strain higher than 3GPa at the BTB source ...

2009

Cu grain growth in damascene narrow trenches

Cyril Cayron

Since the end of the last century, Cu damascene integration scheme has been the favoured choice for advanced interconnect technologies. Indeed, due to the lowest Cu bulk resistivity and to it higher resistance to electromigration, performances enhancement ...

2009

Explicit Compact Model for Ultranarrow Body FinFETs

Jean-Michel Sallese, Christophe Lallement

An explicit charge-based compact model for lightly doped FinFETs is proposed. This design-oriented model is valid and continuous in all operating regimes (subthreshold, linear, and saturation) for channel lengths (L) down to 25 nm, Fin widths (W-Si) down t ...

2009

Investigation of a contacting scheme for self-assembled cleaved edge overgrown InAs nanowires and quantum dot arrays

Anna Fontcuberta i Morral, Emanuele Uccelli

A contacting scheme to measure the transport properties into self-assembled InAs Quantum Wires (QWRs) or Quantum Dots (QDs) is presented. The nanostructures are formed on the (110) cleaved edge of a AlAs/AlGaAs heterostructure substrate by means of the Cle ...

2009

Buckling and layering transitions in confined colloids

Christian David

We report layering transitions within a charged silica colloidal dispersion confined by two opposite like-charged dielectric walls. The ensemble- averaged concentration profiles of the colloids (radius 60 +/- 2 nm) along the confinement direction have been ...

2009

Controlled synthesis of silicon nanocrystals into a thin SiO2 layer synthesized by stencil-masked ultra-low energy ion implantation

Jürgen Brugger, Marc Antonius Friedrich van den Boogaart

We have synthesized Si Nps rich submicron area within a thin SiO2 layer using a new method called “stencil-masked ion implantation”. It consists in implanting silicon ions at ultra-low energy through windows (from 50nm to 2μm) opened in a stencil mask cont ...

2008

Atomic Hole Doping of Graphene

Klaus Kern, Isabella Gierz

The application of graphene in nanoscale electronic devices requires the deliberate control of the density and character of its charge carriers. We show by angle-resolved photoemission spectroscopy that substantial hole doping in the conical band structure ...

2008

Near-edge x-ray absorption fine-structure investigation of graphene

Marco Grioni, Daniela Pacilè

We report the near-edge x-ray absorption fine-structure (NEXAFS) spectrum of a single layer of graphite (graphene) obtained by micromechanical cleavage of highly ordered pyrolytic graphite on a SiO2 substrate. We utilized a photoemission electron microscop ...

American Physical Society2008

Lattice anharmonicity in low-dimensional carbon systems

Nicola Marzari, Ramachandra Rao

The anharmonic properties of low-dimensional carbon crystal lattices are reviewed. The energy and crystal momentum conservation rules in two- and one-dimensional crystals lead to a drastic reduction of the phase space available for anharmonic phonon decay. ...

2008

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