Publications associées à Silicène

Negative capacitance tunnel F£Ts: Experimental demonstration of outstanding simultaneous boosting of on-current, transconductance, overdrive, and swing

Mihai Adrian Ionescu, Igor Stolichnov, Farzan Jazaeri, Ali Saeidi

This paper demonstrates and experimentally reports the highest ever performance boosting in strained silicon-nanowire homojunction TFETs with negative capacitance, provided by matched PZT capacitors. Outstanding enhancements of I on , g m , and overdrive a ...

IEEE2018

Mobility of two-dimensional materials from first principles in an accurate and automated framework

Nicola Marzari, Marco Gibertini, Davide Campi, Thibault Daniel Pierre Sohier

We present a first-principles approach to compute the transport properties of 2D materials in an accurate and automated framework. We use density-functional perturbation theory in the appropriate bidimensional setup with open-boundary conditions in the thi ...

AMER PHYSICAL SOC2018

Resolving the spin splitting in the conduction band of monolayer MoS2

Andras Kis, Ahmet Avsar, Kolyo Marinov

Time-reversal symmetry and broken spin degeneracy enable the exploration of spin and valley quantum degrees of freedom in monolayer transition-metal dichalcogenides. While the strength of the large spin splitting in the valance band of these materials is n ...

Nature Publishing Group2017

Double-layer graphene for enhanced tunable infrared plasmonics

Hatice Altug, Andreas Tittl, Daniel Rodrigo Lopez, Odeta Limaj

Graphene is emerging as a promising material for photonic applications owing to its unique optoelectronic properties. Graphene supports tunable, long-lived and extremely confined plasmons that have great potential for applications such as biosensing and op ...

Chinese Acad Sciences, Changchun Inst Optics Fine Mechanics And Physics2017

Density functional perturbation theory for gated two-dimensional heterostructures: Theoretical developments and application to flexural phonons in graphene

Thibault Daniel Pierre Sohier

The ability to perform first-principles calculations of electronic and vibrational properties of two-dimensional heterostructures in a field-effect setup is crucial for the understanding and design of next-generation devices. We present here an implementat ...

Amer Physical Soc2017

Negative Capacitance as Performance Booster for Tunnel FETs and MOSFETs: An Experimental Study

Mihai Adrian Ionescu, Christian Enz, Igor Stolichnov, Farzan Jazaeri, Ali Saeidi, Francesco Bellando

This letter reports for the first time a full experimental study of performance boosting of tunnel FETs (TFETs) and MOSFETs by negative capacitance (NC) effect. We discuss the importance of capacitance matching between a ferroelectric NC and a device capac ...

2017

Benchmarking of Homojunction Strained-Si NW Tunnel FETs for Basic Analog Functions

Mihai Adrian Ionescu, Cem Alper, Arnab Biswas, Florin Udrea

This paper reports a compact ambipolar model for homojunction strained-silicon (sSi) nanowire (NW) tunnel FETs (TFETs) capable of accurately describing both I-V and G-V characteristics in all regimes of operation, n- and p-ambipolarity, the superlinear ons ...

Institute of Electrical and Electronics Engineers2017

A Steep-Slope Transistor Combining Phase-Change and Band-to-Band-Tunneling to Achieve a sub-Unity Body Factor

Mihai Adrian Ionescu, Anna Krammer, Teodor Rosca, Josef Andreas Schuler, Wolfgang Amadeus Vitale, Cem Alper, Arnab Biswas, Emanuele Andrea Casu, Qun Zhao

Steep-slope transistors allow to scale down the supply voltage and the energy per computed bit of information as compared to conventional field-effect transistors (FETs), due to their sub-60 mV/decade subthreshold swing at room temperature. Currently pursu ...

Nature Publishing Group2017

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Silicène

Negative capacitance tunnel F£Ts: Experimental demonstration of outstanding simultaneous boosting of on-current, transconductance, overdrive, and swing

Mobility of two-dimensional materials from first principles in an accurate and automated framework

Stacking-driven gap formation in layered 1T-TaS2

Resolving the spin splitting in the conduction band of monolayer MoS2

Double-layer graphene for enhanced tunable infrared plasmonics

Density functional perturbation theory for gated two-dimensional heterostructures: Theoretical developments and application to flexural phonons in graphene

Negative Capacitance as Performance Booster for Tunnel FETs and MOSFETs: An Experimental Study

Benchmarking of Homojunction Strained-Si NW Tunnel FETs for Basic Analog Functions

Fermi surface map of large-scale single-orientation graphene on SiO2

A Steep-Slope Transistor Combining Phase-Change and Band-to-Band-Tunneling to Achieve a sub-Unity Body Factor

Graph Chatbot

Chattez avec Graph Search

Negative capacitance tunnel F£Ts: Experimental demonstration of outstanding simultaneous boosting of on-current, transconductance, overdrive, and swing

Mobility of two-dimensional materials from first principles in an accurate and automated framework

Density functional perturbation theory for gated two-dimensional heterostructures: Theoretical developments and application to flexural phonons in graphene

Stacking-driven gap formation in layered 1T-TaS2

Negative Capacitance as Performance Booster for Tunnel FETs and MOSFETs: An Experimental Study

Double-layer graphene for enhanced tunable infrared plasmonics

Resolving the spin splitting in the conduction band of monolayer MoS2

Benchmarking of Homojunction Strained-Si NW Tunnel FETs for Basic Analog Functions

Fermi surface map of large-scale single-orientation graphene on SiO2