Concept

Two-dimensional electron gas

Publications associées (296)

Mahan excitons in room-temperature methylammonium lead bromide perovskites

Majed Chergui, László Forró, Endre Horvath, Ana Akrap, Edoardo Baldini, Márton Kollár, Tania Palmieri

In a seminal paper, Mahan predicted that excitonic bound states can still exist in a semiconductor at electron-hole densities above the insulator-to-metal Mott transition. However, no clear evidence for this exotic quasiparticle, dubbed Mahan exciton, exis ...

NATURE PUBLISHING GROUP2020

AlGaN/GaN Nanowires: from Electron Transport to RF Applications

Giovanni Santoruvo

Gallium Nitride (GaN) and all III-Nitride compounds have revolutionized the world with the development of the blue light emitting diode (LED). In addition, GaN-based epi-structures, such as AlGaN/GaN, enable the fabrication of high electron mobility transi ...

EPFL2020

Modeling of Short-Channel Effects in GaN HEMTs

Farzan Jazaeri

In this article, we propose an explicit and analytic charge-based model for estimating short-channel effects (SCEs) in GaN high-electron-mobility transistor (HEMT) devices. The proposed model is derived from the physical charge-based core of the ecole Poly ...

2020

Zinc Phthalocyanine Conjugated Dimers as Efficient Dopant-Free Hole Transporting Materials in Perovskite Solar Cells

Felix Thomas Eickemeyer, Ulf Anders Hagfeldt, Kazuteru Nonomura, Bowen Yang, Brian Irving Carlsen, Marco Alejandro Ruiz Preciado, Natalie Flores Diaz, Desiré Molina Alcaide

Four ZnPc-dimers with 2,5-thienyl (ZnPc-th-ZnPc 1), 2,7-fluorenyl (ZnPc-flu-ZnPc 2), 3,6-bisthienylldiketopyrrolopyrrole (ZnPc-DPP-ZnPc 3) and 1,4-phenyl (ZnPc-p-ZnPc 4) bridges have been studied as dopant-free hole transporting materials (HTMs) in perovsk ...

WILEY-V C H VERLAG GMBH2020

Impact of Strain and Alloy Disorder on the Electronic Properties of III-Nitride Based Two-dimensional Electron Gases

Pirouz Sohi

Over the past 20 years, III-nitrides (GaN, AlN, InN and their alloys) have proven to be an excellent material group for electronic devices, in particular, for high electron mobility transistors (HEMTs) operating at high frequency and high power. This is ma ...

EPFL2019

A Low-Power Microwave HEMT $LC$ Oscillator Operating Down to 1.4 K

Giovanni Boero, Nergiz Sahin Solmaz, Alessandro Valentino Matheoud

High-electron-mobility transistors (HEMTs) based on 2-D electron gases (2DEGs) in III-V heterostructures have superior mobility compared with the transistors of silicon-based complementary metal-oxide-semiconductor technologies. The large mobility makes th ...

2019

Quantitative Nanoscale Absorption Mapping: A Novel Technique To Probe Optical Absorption of Two-Dimensional Materials

Anna Fontcuberta i Morral, Andras Kis, Dumitru Dumcenco, Luca Francaviglia, Marco Negri

Two-dimensional semiconductors, in particular transition metal dichalcogenides and related heterostructures, have gained increasing interest as they constitute potential new building blocks for the next generation of electronic and optoelectronic applicati ...

2019

First-principles calculations of iodine-related point defects in CsPbI3

Joachim Maier, Alessandro Senocrate

We present here first principles hybrid functional calculations of the atomic and electronic structure of several iodine-related point defects in CsPbI3, a material relevant for photovoltaic applications. We show that the presence of neutral interstitial I ...

2019

Ultrathin Junctionless Nanowire FET Model, Including 2-D Quantum Confinements

Farzan Jazaeri

In this paper, we develop an explicit model to predict the dc electrical behavior in ultrathin surrounding gate junctionless (JL) nanowire field-effect transistors (FETs). The proposed model considers 2-D electrical and geometrical confinements of carrier ...

2019

Valley-Engineering Mobilities in Two-Dimensional Materials

Nicola Marzari, Giovanni Pizzi, Marco Gibertini, Davide Campi, Thibault Daniel Pierre Sohier

Two-dimensional materials are emerging as a promising platform for ultrathin channels in field-effect transistors. To this aim, novel high-mobility semiconductors need to be found or engineered. Although extrinsic mechanisms can in general be minimized by ...

AMER CHEMICAL SOC2019

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