Publications associées à Loi de Moore

Strain relaxation and multidentate anchoring in n-type perovskite transistors and logic circuits

Mohammad Khaja Nazeeruddin, Olga Syzgantseva

The engineering of tin halide perovskites has led to the development of p-type transistors with field-effect mobilities of over 70 cm2 V-1 s-1. However, due to their background hole doping, these perovskites are not suitable for n-type transistors. Ambipol ...

Nature Portfolio2024

Scalable multi-chip quantum architectures enabled by cryogenic hybrid wireless/quantum-coherent network-in-package

Edoardo Charbon, Fabio Sebastiano

The grand challenge of scaling up quantum computers requires a full-stack architectural standpoint. In this position paper, we will present the vision of a new generation of scalable quantum computing architectures featuring distributed quantum cores (Qcor ...

IEEE2023

Computational Imaging SPAD Cameras

Andrei Ardelean

Vision systems built around conventional image sensors have to read, encode and transmit large quantities of pixel information, a majority of which is redundant. As a result, new computational imaging sensor architectures were developed to preprocess the r ...

EPFL2023

Instruction-Level Power Side-Channel Leakage Evaluation of Soft-Core CPUs on Shared FPGAs

Mathias Josef Payer, Mirjana Stojilovic, Shashwat Shrivastava, Ognjen Glamocanin, Jinwei Yao, Nour Ardo

Side-channel disassembly attacks recover CPU instructions from power or electromagnetic side-channel traces measured during code execution. These attacks typically rely on physical access, proximity to the victim device, and high sampling rate measuring in ...

2023

Transcapacitances Modeling in ultra-thin gate-all-around junctionless nanowire FETs, including 2D quantum confinement

Farzan Jazaeri

In this work, we propose an analytical model for the intrinsic transcapacitances in ultra-thin gate-all-around junctionless nanowire field effect transistors in the presence of confined energy states of electrons. The validity of the developed model is con ...

PERGAMON-ELSEVIER SCIENCE LTD2023

Energy Efficient Logic and Memory Design With Beyond-CMOS Magnetoelectric Spin-Orbit (MESO) Technology Toward Ultralow Supply Voltage

Kyojin Choo

Devices based on the spin as the fundamental computing unit provide a promising beyond-complementary metal-oxide-semiconductor (CMOS) device option, thanks to their energy efficiency and compatibility with CMOS. One such option is a magnetoelectric spin-or ...

Ieee-Inst Electrical Electronics Engineers Inc2023

Energy-Efficient Electronic Functions Based on the Co-integration of 2D and Ferroelectric Materials

Sadegh Kamaei Bahmaei

The digital revolution has significantly transformed our world over the past decades, driven by the scaling of transistor dimensions and the exponential increase in computation power. However, as the CMOS scaling era approaches its end, the semiconductor i ...

EPFL2023

New ultrahigh-speed device concepts: from THz nanoplasma devices to glass-like electronics for neuromorphic computation

Mohammad Samizadeh Nikooytabalvandani

There is a never-ending push for electronic systems to provide faster operation speeds, higher energy efficiencies, and higher power capabilities at smaller scales. These requirements are apparent in different areas of electronics, from radiofrequency (RF) ...

EPFL2023

Integrated Electronics for Deep Implants to Remotely Monitor Hemodynamics

Mustafa Besirli

The integration of technology in the medical field has greatly improved accuracy in diagnoses, thus leading to more effective treatments. Wearable and implantable medical devices offer great potential for remote patient monitoring, particularly for heart f ...

EPFL2023

Off-axis electron holography for the direct visualization of perpendicular shape anisotropy in nanoscale 3D magnetic random-access-memory devices

Victor Carle Adrien Boureau

Perpendicular shape anisotropy (PSA) and double magnetic tunnel junctions (DMTJs) offer practical solutions to downscale spin-transfer-torque Magnetic Random-Access Memory (STT-MRAM) beyond 20 nm technology nodes, while retaining their thermal stability an ...

AIP Publishing2022