Concept

Diode logic

Publications associées (67)

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Field Plate Design for Low Leakage Current in Lateral GaN Power Schottky Diodes: Role of the Pinch-Off Voltage

Elison de Nazareth Matioli, Jun Ma, Dante Colao Zanuz

In this letter, we demonstrate a general model to reduce the reverse leakage current (I-R) in high-voltage AlGaN/GaN Schottky diodes (SBDs) by engineering the pinchoff voltage (V-p) of their field plates (FPs). The maximum voltage drop at the Schottky junc ...

Institute of Electrical and Electronics Engineers2017

900 V Reverse-Blocking GaN-on-Si MOSHEMTs With a Hybrid Tri-Anode Schottky Drain

Elison de Nazareth Matioli, Jun Ma, Minghua Zhu

In this letter, we present high-performance GaN-on-Si metal-oxide-semiconductor high electron mobility transistors with record reverse-blocking (RB) capability. By replacing the conventional ohmic drain with a hybrid tri-anode Schottky drain, a high revers ...

2017

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A digital circuit including a signal path with a false path, whereby the signal path includes at least 3 logic instances, the digital circuit further including a logic monitoring element for monitoring a part of the digital circuit, and for outputting a cu ...

2017

Robust Hierarchically Structured Biphasic Ambipolar Oxide Photoelectrodes for Light-Driven Chemical Regulation and Switchable Logic Applications

Kevin Sivula, Nestor Guijarro Carratala, Florian Le Formal, Xavier Adrian Jeanbourquin, Mathieu Steven Prévot, Wiktor Stefan Bourée

Tunable ambipolar photoelectrochemical behavior emerges from microdomains of nanostructured p-type CuFeO2 and n-type Fe2O3 that arise from a single facile solution-processed thin fi lm. The switchable operation of this system is controlled by chemical, opt ...

Wiley-Blackwell2016

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The electron-hole bilayer tunnel (EHBTFET). has been proposed as a density of states (DOS) switch capable of achieving a subthreshold slope lower than 60mV/decade at room temperature; however, one of the main challenges is the control of the lateral band-t ...

Institute of Physics2016

We describe the technology and performance of integrated enhancement/depletion (E/D)-mode n(++) GaN/InAlN/AlN/GaN HEMTs with a self-aligned metal-oxide-semiconductor (MOS) gate structure. An identical starting epi-structure was used for both types of devic ...

Iop Publishing Ltd2016

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We study the logic synthesis of emerging nanotechnologies whose elementary devices abstraction is a majority voter. We argue that synthesis tools, natively supporting the majority logic abstraction, are the technology enablers. This is because they allow d ...

Ieee2016

Exploiting Circuit Duality to Speed Up SAT

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Luca Gaetano Amarù, Maciej Jerzy Ciesielski

In this paper, we establish a non-trivial duality between tautology and contradiction check to speed up circuit SAT. Tautology check determines if a logic circuit is true in every possible interpretation. Analogously, contradiction check dete ...

IEEE2015

A Low Dark Count p-i-n Diode Based SPAD in CMOS Technology

Edoardo Charbon

In this paper, a novel CMOS single-photon avalanche diode (SPAD) is presented, and the device is designed using a vertical p-i-n diode construction. The p-i-n diode with a wide depletion region enables a low-noise operation. The proposed design achieves da ...

2015

Avalanche noise diodes: A compact circuit model compatible with advanced CAD tools

Christian Enz, Pierre-André Farine, Cyril Botteron, Gabriele Tasselli

This paper proposes, for the first time, a compact model for avalanche noise diodes that can easily be inserted in advanced CAD tools. The model is based on the theory of the Read type microwave avalanche diodes. It fully accounts for the electronic tuning ...

IEEE2015