Publications associées à Schottky defect

Identification of defect levels at InxGa1-xAs/oxide interfaces through hybrid functionals

Hybrid density functional calculations and atomistic models are used to study point defects in III-V compounds. We first study dangling-bonds in InxGa1-xAs. In GaAs, the cation dangling-bond levels are found in the upper part of the band gap, but they are ...

Elsevier2011

Defect levels of carbon-related defects at the SiC/SiO2 interface from hybrid functionals

Alfredo Pasquarello, Peter Broqvist, Audrius Alkauskas, Fabien Devynck

We investigate carbon single-atom and pair defects at the SiC/SiO2 interface as candidate defects for the density of defect states in the SiC band gap. In order to accurately describe the electronic defect levels with respect to the SiC band edges, we use ...

2011

Band-edge problem in the theoretical determination of defect energy levels: The O vacancy in ZnO as a benchmark case

Alfredo Pasquarello, Audrius Alkauskas

Calculations of formation energies and charge transition levels of defects routinely rely on density functional theory (DFT) for describing the electronic structure. Since bulk band gaps of semiconductors and insulators are not well described in semilocal ...

2011

Polarized light extraction in m-plane GaN light-emitting diodes by embedded photonic-crystals

Elison de Nazareth Matioli

The polarization-preserving property of photonic crystals (PhCs) is combined to the superior extraction efficiency of embedded PhCs to enhance polarized light emission in m-plane GaN light-emitting diodes. As guided modes in m-plane GaN are mostly polarize ...

Amer Inst Physics2011

Defects in a-GaN grown on r-sapphire by hydride vapor phase epitaxy

Nicolas Grandjean, Pierre Stadelmann, Denis Martin, Tiankai Zhu

Non-polar a-GaN films grown on r-sapphire by hydride vapor phase epitaxy (HVPE) are studied using transmission electron microscopy (TEM). Despite the small lattice mismatch in a-GaN ([1 0 (1) over bar 0] similar to 1.1% and [0 00 1] similar to 16%), high d ...

2011

Cation-site intrinsic defects in Zn-doped CdTe

Nava Setter, Alexander Tagantsev, Alexandra Sarabando de Carvalho

The properties of the cation vacancy and the Te antisite, two dominant defects in CdTe and Cd1-xZnxTe alloys grown in Te-rich conditions, are examined using first-principles calculations. First, the structure, electronic levels, and migration paths of V-Cd ...

2010

Defect Formation in Ga-Catalyzed Silicon Nanowires

Anna Fontcuberta i Morral, Sonia Conesa Boj, Li Wei, Père Roca i Cabarrocas

The synthesis of silicon nanowires by Ga-assisted plasma enhanced chemical vapor deposition (PECVD) has been recently demonstrated. In the present work, we study in detail the structural characteristics of the synthesized nanowires. High resolution transmi ...

American Chemical Society2010

Compensation mechanism in silicon-doped gallium arsenide nanowires

Anna Fontcuberta i Morral, Emanuele Uccelli, Bernt Ketterer

P-type gallium arsenide nanowires were grown with different silicon doping concentrations. The incorporation is monitored by Raman spectroscopy of the local vibrational modes. For Si-concentrations up to 1.4 x 10(18) cm(-3), silicon incorporates mainly in ...

American Institute of Physics2010

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Schottky defect

Phase stability, point defects, and elastic properties of W-V and W-Ta alloys

Identification of defect levels at InxGa1-xAs/oxide interfaces through hybrid functionals

Defect levels of carbon-related defects at the SiC/SiO2 interface from hybrid functionals

Band-edge problem in the theoretical determination of defect energy levels: The O vacancy in ZnO as a benchmark case

Polarized light extraction in m-plane GaN light-emitting diodes by embedded photonic-crystals

Defects in a-GaN grown on r-sapphire by hydride vapor phase epitaxy

Cation-site intrinsic defects in Zn-doped CdTe

Defect Formation in Ga-Catalyzed Silicon Nanowires

Synthesis and characterization of group II-Vi semiconductor nanowires

Compensation mechanism in silicon-doped gallium arsenide nanowires

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Chattez avec Graph Search

Cation-site intrinsic defects in Zn-doped CdTe

Defect Formation in Ga-Catalyzed Silicon Nanowires

Identification of defect levels at InxGa1-xAs/oxide interfaces through hybrid functionals

Phase stability, point defects, and elastic properties of W-V and W-Ta alloys

Synthesis and characterization of group II-Vi semiconductor nanowires

Compensation mechanism in silicon-doped gallium arsenide nanowires

Polarized light extraction in m-plane GaN light-emitting diodes by embedded photonic-crystals

Band-edge problem in the theoretical determination of defect energy levels: The O vacancy in ZnO as a benchmark case

Defect levels of carbon-related defects at the SiC/SiO2 interface from hybrid functionals

Defects in a-GaN grown on r-sapphire by hydride vapor phase epitaxy