Concept

Diode PIN

Publications associées (81)

Silicon CMOS and InGaAs(P)/InP SPADs for NIR/SWIR detection

Applications demanding imaging at low-light conditions at near-infrared (NIR) and short-wave infrared (SWIR) wavelengths, such as quantum information science, biophotonics, space imaging, and light detection and ranging (LiDAR), have accelerated the develo ...

EPFL2024

HASPIDE: a project for the development of hydrogenated amorphous silicon radiation sensors on a flexible substrate

Giovanni De Cesare, Sylvain Dunand, Jonathan Emanuel Thomet, Mikaël Martino, Luca Massimiliano Antognini, Matthew James Large

Hydrogenated amorphous silicon (a-Si:H) is a material with a very good radiation hardness and with the possibility of deposition on flexible substrates like Polyimide (PI). Exploiting these properties, the HASPIDE (Hydrogenated Amorphous Silicon PIxels DEt ...

Iop Publishing Ltd2024

Time-resolved multi-gate ion sensitive field effect transducer and system and method of operating the same

Jean-Michel Sallese, Adil Koukab

A time-resolved multi-gate ion sensitive field effect transducer, including a silicon layer, a P-doped region in the silicon layer and a first electrode in electric connection with the P doped region, a N-doped region in the silicon layer and a second elec ...

2023

Charge Extraction and Recombination Dynamics of CdSe/CdTe Solar Cells Studied with Transient Photovoltage/Photocurrent Techniques

Mohammad Khaja Nazeeruddin, Iwan Zimmermann, Lei Chen

Significant advancements have been made in the development of high-performance cadmium telluride (CdTe)-based thin film solar cells. However, studies examining the transient excited-state charge dynamics, which determine the final steady-state device perfo ...

New York2023

Protection unit for wide bandgap power switching device and method for operating the wide bandgap power switching device

Drazen Dujic, Chengmin Li

The invention relates to a method for operating a power switching device, particularly a wide bandgap power switching device, in a power application, particularly in a converter, comprising the steps of:- checking (S2) a transient voltage of or related to ...

2023

Charge sensing properties ofmonolithic CMOS pixel sensors fabricated in a 65 nm technology

Francesco Piro

In this work the initial performance studies of the first small monolithic pixel sensors dedicated to charged particle detection, called CE-65, fabricated in the 65nm TowerJazz Panasonic Semiconductor Company are presented. The tested prototypes comprise m ...

ELSEVIER2022

High sensitivity single-photon avalanche diode array

Edoardo Charbon, Claudio Bruschini, Ivan Michel Antolovic

The present invention relates to a photodetector array for capturing image data, comprising: - photodetector cells arranged on a substrate, each including a single-photon avalanche diode, wherein the active areas of the photodetector cells are neighbored a ...

2021

Critical role of H-aggregation for high-efficiency photoinduced charge generation in pristine pentamethine cyanine salts

Jacques-Edouard Moser, Frank Nüesch, George Cameron Fish, Juan Manuel Moreno Naranjo

The mechanism of photoinduced symmetry-breaking charge separation in solid cyanine salts at the base of organic photovoltaic and optoelectronic devices is still debated. Here, we employ femtosecond transient absorption spectroscopy (TAS) to monitor the cha ...

2021

Bi-functional interfaces by poly(ionic liquid) treatment in efficient pin and nip perovskite solar cells

Mohammad Khaja Nazeeruddin, Christian Michael Wolff, Filippo de Angelis, Antonio Abate, Giulia Grancini, Albertus Adrian Sutanto, Pietro Caprioglio

Approaches to boost the efficiency and stability of perovskite solar cells often address one singular problem in a specific device configuration. In this work, we utilize a poly(ionic liquid) (PIL) to introduce a multi-functional interlayer to improve the ...

ROYAL SOC CHEMISTRY2021

Low-power image sensor system with single-photon avalanche diode photodetectors

Edoardo Charbon, Claudio Bruschini, Ivan Michel Antolovic

The invention relates to an image sensor comprising a photodetector array including neighboring photodetector elements, each photodetector element comprising: - a photodetector cell having a photodiode and a reset unit; - a cell control unit coupled with t ...

2021

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