Concept
Nitrure de gallium
Publications associées (618)
III-N blue-emitting epi-structures with high densities of dislocations: Fundamental mechanisms for efficiency improvement and applications
Since the dawn of humanity, human beings seeked to light their surroundings for their well-being, security and development. The efficiency of ancient lighting devices, e.g. oil lamps or candles, was in the order of 0.03-0.04% and jumped to 0.4-0.6% with th ...
EPFL2024Study of growth-induced point defects and their impact on InGaN-based optoelectronic devices
GaN exhibits a decomposition tendency for temperatures far below its melting point and common growth temperatures used in metal-organic vapour phase epitaxy (MOVPE).This characteristic is known to be a major obstacle for realising GaN bulk substrate. There ...
EPFL2024Silicon nitride electric-field poled microresonator modulator
Camille Sophie Brès, Anton Stroganov, Boris Zabelich, Christian André Clément Lafforgue, Edgars Nitiss
Stoichiometric silicon nitride is a highly regarded platform for its favorable attributes, such as low propagation loss and compatibility with complementary metal-oxide-semiconductor technology, making it a prominent choice for various linear and nonlinear ...
2024Polarization-enhanced GaN Schottky barrier diodes: Ultra-thin InGaN for high breakdown voltage and low Ron
Elison de Nazareth Matioli, Alessandro Floriduz, Zheng Hao
In this work, we present a concept that leverages the strong piezoelectric polarization field in InGaN, which counteracts the external electric field at reverse bias. We show that despite the smaller InGaN band-gap and lower critical electric field, its st ...
2024Strain engineering and strain measurement by spring tethers on suspended epitaxial GaN-on-Si photonic crystal devices
Suspended epitaxial gallium nitride (GaN) on silicon (Si) photonic crystal devices suffer from large residual tensile strain, especially for long waveguides, because fine structures tend to crack due to large stress. By introducing spring-like tethers, des ...
Bristol2024Nanostructure and Optical Property Tailoring of Zinc Tin Nitride Thin Films through Phenomenological Decoupling: A Pathway to Enhanced Control
Aïcha Hessler-Wyser, Johann Michler, Amit Sharma, Caroline Hain, Daniele Casari, Thomas Nelis
This work addresses the need for precise control of thin film sputtering processes to enable thin film material tailoring on the example of zinc tin nitride (ZTN) thin films deposited via microwave plasma-assisted high power reactive magnetron sputtering ( ...
Amer Chemical Soc2024Aptamer Renaissance for Neurochemical Biosensing
Unraveling the complexities of brain function, which is crucial for advancing human health, remains a grand challenge. This endeavor demands precise monitoring of small molecules such as neurotransmitters, the chemical messengers in the brain. In this Pers ...
2024Accurate Measurement of Dynamic ON-Resistance in GaN Transistors at Steady-State
Elison de Nazareth Matioli, Hongkeng Zhu
Accurate characterization of the dynamic ON-resistance (RON) degradation is important to predict conduction losses for gallium nitride high-electron-mobility transistors (GaN HEMTs). However, even for the same device, many inconsistent results of dynamic R ...
2023Single-frequency violet and blue laser emission from AlGaInN photonic integrated circuit chips
Tobias Kippenberg, Anat Siddharth
Chip-based, single-frequency and low phase-noise integrated photonic laser diodes emitting in the violet (412 nm) and blue (461 nm) regime are demonstrated. The GaN-based edge-emitting laser diodes were coupled to high-quality on-chip micro-resonators for ...
Optica Publishing Group2023Voltage-driven Reactivity of Liquid Ga and CuGa Nanoparticles for Electrocatalytic CO2 Reduction and Synthesis
The rising atmospheric level of carbon dioxide, CO2, contributes to climate change and poses urgent need to find scalable solutions both to decrease its emissions and to be able to recycle it, if the goals of Paris Agreement to limit the temperature rise a ...
EPFL2023