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The absorption of multiple photons when there is no resonant intermediate state is a well-known nonlinear process in atomic vapours, dyes and semiconductors. The N-photon absorption (NPA) rate for donors in semiconductors scales proportionally from hydroge ...
In this paper, a novel CMOS single-photon avalanche diode (SPAD) is presented, and the device is designed using a vertical p-i-n diode construction. The p-i-n diode with a wide depletion region enables a low-noise operation. The proposed design achieves da ...
Future digital signal processing (DSP) systems must provide robustness on algorithm and application level to the presence of reliability issues that come along with corresponding implementations in modern semiconductor process technologies. In this paper, ...
We present a novel method named truncated hierarchical unstructured splines (THU-splines) that supports both local h-refinement and unstructured quadrilateral meshes. In a THU-spline construction, an unstructured quadrilateral mesh is taken as the input co ...
Values need to be represented differently when interacting with certain language features. For example, an integer has to take an object-based representation when interacting with erased generics, although, for performance reasons, the stack-based value re ...
We report a study of the modes B± → DK ± and B± → DK± where D() decays to CP eigenstates. The data sample used contains 275 × 106 BB̄ events at the Y(4S) resonance collected by the Belle detector at the KEKB energy-asymmetric e+e- collider. The CP asymme ...
This work presents a novel InGaAs/InP SPAD structure fabricated using a selective area growth (SAG) method. The surface topography of the selectively grown film deposited within the 70 mu m diffusion apertures is used to engineer the Zn diffusion profile t ...