Publications associées à Signed number representations

SPAD Developed in 55 nm Bipolar-CMOS-DMOS Technology Achieving Near 90% Peak PDP

Edoardo Charbon, Claudio Bruschini, Ekin Kizilkan, Pouyan Keshavarzian, Won Yong Ha, Francesco Gramuglia, Myung Jae Lee

We present a single-photon avalanche diode (SPAD) developed in 55 nm bipolar-CMOS-DMOS (BCD) technology, which achieves high photon detection probability (PDP) while its breakdown voltage is lower than 20 V. To enhance the PDP performance, the SPAD junctio ...

Ieee-Inst Electrical Electronics Engineers Inc2024

A 73% Peak PDP Single-Photon Avalanche Diode Implemented in 110 nm CIS Technology With Doping Compensation

Edoardo Charbon, Claudio Bruschini, Ekin Kizilkan, Utku Karaca, Myung Jae Lee

In this article, we present 10 mu m diameter SPADs fabricated in 110 nm CIS technology based on an N (+) /HVPW junction, with enhanced sensitivity at short wavelengths. To reduce tunneling noise due to the highly-doped layers in the process, a doping compe ...

Ieee-Inst Electrical Electronics Engineers Inc2024

Guard-Ring-Free InGaAs/InP Single-Photon Avalanche Diode Based on a Novel One-Step Zn-Diffusion Technique

Edoardo Charbon, Claudio Bruschini, Ekin Kizilkan, Utku Karaca, Vladimir Pesic, Myung Jae Lee

This work presents a novel InGaAs/InP SPAD structure fabricated using a selective area growth (SAG) method. The surface topography of the selectively grown film deposited within the 70 mu m diffusion apertures is used to engineer the Zn diffusion profile t ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Engineering Breakdown Probability Profile for PDP and DCR Optimization in a SPAD Fabricated in a Standard 55nm BCD Process

Edoardo Charbon, Claudio Bruschini, Ekin Kizilkan, Pouyan Keshavarzian, Francesco Gramuglia, Myung Jae Lee

CMOS Single-Photon Avalanche Diodes (SPADs) have broken into the mainstream by enabling the adoption of imaging, timing, and security technologies in a variety of applications within the consumer, medical and industrial domains. The continued scaling of te ...

2021

A Low-noise CMOS SPAD Pixel with 12.1 ps SPTR and 3 ns Dead Time

Edoardo Charbon, Claudio Bruschini, Ming-Lo Wu, Francesco Gramuglia, Myung Jae Lee

In this paper, we present the first CMOS SPAD with performance comparable or better than that of the best custom SPADs, to date. The SPAD-based design, fully integrated in 180 nm CMOS technology, achieves a peak PDP of 55% at 480nm with a very broad spectr ...

2021

Megapixel time-gated SPAD image sensor for 2D and 3D imaging applications

Edoardo Charbon, Claudio Bruschini, Ivan Michel Antolovic, Andrei Ardelean, Ming-Lo Wu, Arin Can Ülkü, Kazuhiro Morimoto

We present a 1 Mpixel single-photon avalanche diode camera featuring 3.8 ns time gating and 24 kips frame rate, fabricated in 180 nm CMOS image sensor technology. We designed two pixels with a pitch of 9.4 mu m in 7 T and 5.75 T configurations respectively ...

OPTICAL SOC AMER2020

Self-Binarizing Networks

Sabine Süsstrunk, Radhakrishna Achanta, Fayez Lahoud, Pablo Marquez Neila

We present a method to train self-binarizing neural networks, that is, networks that evolve their weights and activations during training to become binary. To obtain similar binary networks, existing methods rely on the sign activation function. This funct ...

arXiv2019

String Matching: Communication, Circuits, and Learning

Mika Tapani Göös

String matching is the problem of deciding whether a given n-bit string contains a given k-bit pattern. We study the complexity of this problem in three settings. - Communication complexity. For small k, we provide near-optimal upper and lower bounds on th ...

Schloss Dagstuhl - Leibniz-Zentrum fuer Informatik GmbH, Wadern/Saarbruecken, Germany2019

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Signed number representations

SPAD Developed in 55 nm Bipolar-CMOS-DMOS Technology Achieving Near 90% Peak PDP

A 73% Peak PDP Single-Photon Avalanche Diode Implemented in 110 nm CIS Technology With Doping Compensation

Guard-Ring-Free InGaAs/InP Single-Photon Avalanche Diode Based on a Novel One-Step Zn-Diffusion Technique

Graph Representation Learning with Optimal Transport: Analysis and Applications

MATHICSE Technical Report: THU-Splines - Highly Localized Refinement on Smooth Unstructured Splines

Engineering Breakdown Probability Profile for PDP and DCR Optimization in a SPAD Fabricated in a Standard 55nm BCD Process

A Low-noise CMOS SPAD Pixel with 12.1 ps SPTR and 3 ns Dead Time

Megapixel time-gated SPAD image sensor for 2D and 3D imaging applications

Self-Binarizing Networks

String Matching: Communication, Circuits, and Learning

Graph Chatbot

Chattez avec Graph Search

MATHICSE Technical Report: THU-Splines - Highly Localized Refinement on Smooth Unstructured Splines

Guard-Ring-Free InGaAs/InP Single-Photon Avalanche Diode Based on a Novel One-Step Zn-Diffusion Technique

Graph Representation Learning with Optimal Transport: Analysis and Applications

Engineering Breakdown Probability Profile for PDP and DCR Optimization in a SPAD Fabricated in a Standard 55nm BCD Process

Self-Binarizing Networks

SPAD Developed in 55 nm Bipolar-CMOS-DMOS Technology Achieving Near 90% Peak PDP

A 73% Peak PDP Single-Photon Avalanche Diode Implemented in 110 nm CIS Technology With Doping Compensation

A Low-noise CMOS SPAD Pixel with 12.1 ps SPTR and 3 ns Dead Time

Megapixel time-gated SPAD image sensor for 2D and 3D imaging applications

String Matching: Communication, Circuits, and Learning