Publications associées à Silicium-germanium

Silicon CMOS and InGaAs(P)/InP SPADs for NIR/SWIR detection

Applications demanding imaging at low-light conditions at near-infrared (NIR) and short-wave infrared (SWIR) wavelengths, such as quantum information science, biophotonics, space imaging, and light detection and ranging (LiDAR), have accelerated the develo ...

EPFL2024

Lithium tantalate photonic integrated circuits for volume manufacturing

Tobias Kippenberg, Mikhail Churaev, Xinru Ji, Zihan Li, Alisa Davydova, Junyin Zhang, Yang Chen, Xi Wang, Kai Huang, Chen Yang

Electro-optical photonic integrated circuits (PICs) based on lithium niobate (LiNbO3) have demonstrated the vast capabilities of materials with a high Pockels coefficient1,2. They enable linear and high-speed modulators operating at complementary metal–oxi ...

2024

Bodily implant microelectrode and bodily implant microelectrode fabrication method

Sandro Carrara, Diego Ghezzi, Gian Luca Barbruni

The present invention concerns a bodily implantable or probe device and microelectrode fabrication method comprising providing at least one silicon substrate including an electronic device or unit; providing, on a first side of the silicon substrate, at le ...

2024

A Dual-Channel Gate Driver Design with Active Voltage Balancing Circuit for Series Connection of SiC MOSFETs

Drazen Dujic

Dual-channel gate driver is commonly utilized in the industry for accommodating the widespread use of half-bridge power modules. As wide-bandgap devices become increasingly prevalent due to their superior switching characteristics compared with conventiona ...

2024

Shortwave Infrared-Sensitive, Narrowband Organic Upconversion Devices with a Gain

Wei-Hsu Hu

Sensing and imaging of light in the shortwave infrared (SWIR) range is increasingly used in various fields, including bio-imaging, remote sensing, and semiconductor process control. SWIR-sensitive organic photodetectors (OPDs) are promising because organic ...

EPFL2024

Cascaded all-optical quantization employing step-size MMI and shape-optimized power splitter

Jijun He, Xiaowei Zhang, Jian Wu, Ye Tian

As a key unit of future high-throughput communications, optical analog to digital converter (OADC) with all-optical quantizer element that simultaneously possesses high resolution, large bandwidth and compact size is highly promising. A pending issue of co ...

ELSEVIER SCI LTD2023

Momentum-Space Imaging of Ultra-Thin Electron Liquids in δ-Doped Silicon

Gabriel Aeppli, Nicolò D'Anna

Two-dimensional dopant layers (δ-layers) in semiconductors provide the high-mobility electron liquids (2DELs) needed for nanoscale quantum-electronic devices. Key parameters such as carrier densities, effective masses, and confinement thicknesses for 2DELs ...

WILEY2023

Fab-to-fab and run-to-run variability in 130 nm and 65 nm CMOS technologies exposed to ultra-high TID

Jean-Michel Sallese, Adil Koukab, Gennaro Termo, Stefano Michelis

The discovery of a large fab-to-fab variability in the TID response of the CMOS technologies used in the design of ASICs for the particle detectors of the HL-LHC triggered a monitoring effort to verify the consistency of the CMOS production process over ti ...

IOP Publishing Ltd2023

Strained crystalline nanomechanical resonators with quality factors above 10 billion

Tobias Kippenberg, Sergey Fedorov, Alberto Beccari, Nils Johan Engelsen

In strained mechanical resonators, the concurrence of tensile stress and geometric nonlinearity dramatically reduces dissipation. This phenomenon, called dissipation dilution, is employed in mirror suspensions of gravitational-wave interferometers and at t ...

NATURE PORTFOLIO2022

Near-junction microfluidic cooling for high power-density GaN-on-Si electronics: A wafer, device, packaging, and system-level investigation

Remco Franciscus Peter van Erp

Electrification of the energy section, from generation to end-use, plays an essential role in reducing global CO2 emission. Innovations in power electronics are required to increase conversion efficiency and power density. Gallium nitride (GaN) transistors ...

EPFL2022