Concept
Die (circuit intégré)
Publications associées (43)
Towards Scalable Electronics: Synthetic 2D Materials for Large-Area 2D Circuit Integration
In the past decades, a significant increase of the transistor density on a chip has led to exponential growth in computational power driven by Moore's law. To overcome the bottleneck of traditional von-Neumann architecture in computational efficiency, effo ...
EPFL2024Front-End Circuits for Radiation-Hard Monolithic CMOS Sensors targeting High-Energy Physics Applications
Monolithic pixel sensors integrate the sensor matrix and readout in the same silicon die, and therefore present several advantages over the more largely used hybrid detectors in high-energy physics. They offer an easier detector assembly, lower cost, lower ...
EPFL2023A Compact Front-End Circuit for a Monolithic Sensor in a 65-nm CMOS Imaging Technology
Edoardo Charbon, Francesco Piro
This article presents the design of a front-end circuit for monolithic active pixel sensors (MAPSs). The circuit operates with a sensor featuring a small, low-capacitance (
Piscataway2023A new versatile hybrid MEMS technology for high sensitivity, fluid proof sensing applications.
The field of micro electromechanical systems (MEMS) evolved from the microelectronic industry and the technologies developed to fabricate integrated circuits. As a result, MEMS are commonly fabricated on silicon wafers. The development of MEMS has been dri ...
EPFL2022A cryo-CMOS chip that integrates silicon quantum dots and multiplexed dispersive readout electronics
Edoardo Charbon, Andrea Ruffino, Yatao Peng
An integrated circuit fabricated using industry-standard 40 nm complementary metal-oxide-semiconductor technology can combine silicon quantum devices, digital addressing and analogue multiplexed dispersive readout electronics. As quantum computers grow in ...
NATURE PORTFOLIO2021Monolithically Integrated Catalyst-Free High Aspect Ratio InAs-on-Insulator (InAsOI) FinFETs for pH Sensing
Mihai Adrian Ionescu, Fabien Patrick Wildhaber, Junrui Zhang, Maneesha Rupakula, Francesco Bellando, Clarissa Convertino
In this work, we report a novel Indium Arsenide-on-insulator (InAsOI) FinFET platform designed with record high aspect ratio that favors the use of the devices as charge sensors. InAs has very high mobility among III-V semiconductors and an intrinsic surfa ...
2020InAs-on-Insulator Fin Nanostructures for Integrated Computation and Sensing Functions
Field-effect transistors (FETs) have established themselves as a leading platform for electrical detection of chemical and biological species. Their advantages over other optical, mechanical sensing platforms are attributed to being miniaturizable, mechani ...
EPFL2020Conformable Hybrid Systems for Implantable Bioelectronic Interfaces
Stéphanie Lacour, Giuseppe Schiavone, Florian Dylan Fallegger
Conformable bioelectronic systems are promising tools that may aid the understanding of diseases, alleviate pathological symptoms such as chronic pain, heart arrhythmia, and dysfunctions, and assist in reversing conditions such as deafness, blindness, and ...
2020Monolithically integrated catalyst-free High Aspect Ratio InAs-On-Insulator (InAsOI) FinFETs for pH sensing
Mihai Adrian Ionescu, Kirsten Emilie Moselund, Fabien Patrick Wildhaber, Junrui Zhang, Maneesha Rupakula, Francesco Bellando, Clarissa Convertino
In this work, we report a novel Indium Arsenide-on-insulator (InAsOI) FinFET platform designed with record high aspect ratio that favor the use of the devices as charge sensors. InAs has very high mobility among III-V semiconductors and an intrinsic surfac ...
IEEE2019Tri-gate technologies for high-performance power GaN devices
GaN-based electronic devices have great potential for future power applications, thanks to their wide band-gap, high breakdown electric field, and high electron mobility. In addition, these devices can be integrated on large-size Si substrates and enable n ...
EPFL2019