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Concept

Magnetic domain

Résumé

A magnetic domain is a region within a magnetic material in which the magnetization is in a uniform direction. This means that the individual magnetic moments of the atoms are aligned with one another and they point in the same direction. When cooled below a temperature called the Curie temperature, the magnetization of a piece of ferromagnetic material spontaneously divides into many small regions called magnetic domains. The magnetization within each domain points in a uniform direction, but the magnetization of different domains may point in different directions. Magnetic domain structure is responsible for the magnetic behavior of ferromagnetic materials like iron, nickel, cobalt and their alloys, and ferrimagnetic materials like ferrite. This includes the formation of permanent magnets and the attraction of ferromagnetic materials to a magnetic field. The regions separating magnetic domains are called domain walls, where the magnetization rotates coherently from the dir

Source officielle

https://en.wikipedia.org/wiki/Magnetic_domain

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Copper wires each one containing a pseudo-spin valve of Co/Cu/Co were produced by electrodeposition inside nanoporous polycarbonate membranes. These wires have a diameter of 40 nm and a length of 6000 nm of which only 50 nm relates to the spin valve. In order to be able to measure the magnetic behavior of a single wire, the entire deposition was carried out in a Co/Cu multibath and then electrical contact of a single wire was done with a special equipment using a pure Copper bath. Knowing that such wire has a resistance of the order of 500 Ω, with a Giant Magneto-Resistance ratio of about 0.2 %, one needs a sufficiently sensitive measuring apparatus be able to detect such variations. After having carried out a magnetoresistive characterization, we used a set-up built with a Wheatstone bridge in which the sample is integrated. The resistance variation associated with the magnetization reversal being weak, we were very concerned with the sample quality during these three years of research. As high current densities are injected, a behavior of "Two Level Fluctuation" appeared between parallel and antiparallel states. Such phenomena can be treated only by statistics. Therefore, several thousands of measurements were taken in order to be able to understand the statistical behaviors of the current induced magnetization switching. To better understand the mechanisms of the reversal, we studied its dynamics with a model of double potential well by measuring the average time of residence in parallel (respectively in antiparallel) state as a function of current and applied field for different amplitudes and signs. From our analyses, it arises clearly that the dynamics of the magnetization reversal induced by a high current density, in pseudo-spin valves, could be formulated in terms of Spin-Transfer-Torque. We show that the agreement with this model is remarkable.

EPFL2004

Chargement

Towards room-temperature deterministic ferroelectric control of ferromagnetic thin films

Zhen Huang

The persisting demand of higher computing power and faster information processing keeps pushing scientists and engineers to explore novel materials and device structures. Within emerging functional materials, there is a focus on multiferroics materials and material-systems possessing both ferroelectric and ferromagnetic orders. Multiferroics with two order parameters coupled through a magnetoelectric interaction are of particular interest for novel information processing technologies. This thesis explores a promising concept of magnetoelectric multiferroic heterostructure incorporating separate ferroelectric and ferromagnetic thin layers with field-effect-mediated coupling through the heterointerface. The major issues related to ferroelectric control of ferromagnetism in multiferroic heterostructures addressed in this thesis include non-volatile magnetoelectric coupling at room temperature, deterministic switching of magnetization via polarization reversal, ferroelectric control of dynamics of magnetic domains and integration of ferroelectric gates on magnetic channels. The major accomplishments of this thesis are the following: Non-volatile ferroelectric control of magnetic properties has been demonstrated in ultra-thin Co layers at room temperature. The ferromagnetic transition Curie temperature, magnetic anisotropy energy and magnetic coercivity are shown to be switchable via the persistent field effect associated with the ferroelectric polarization. The magnitude of the effect is comparable or exceeds the results observed using the conventional (non-ferroelectric) gates. Local control of individual magnetic domain nucleation and propagation in Co channels by creating new ferroelectric domains has been achieved at the ambient conditions. The microscopic ferroelectric domains written on poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] ferroelectric polymer gate projected onto the magnetic channel changing locally the magnetic anisotropy energy, and consequently altering magnetic domain dynamics. Therefore it was possible to promote/impede magnetic domain nucleation and significantly change the domain wall velocity using a non-destructive and reversible procedure of ferroelectric domain writing. Non-volatile control of anisotropic magnetoresistance (AMR) has been demonstrated on diluted magnetic semiconductor (Ga,Mn)(As,P) thin films with integrated P(VDF-TrFE) ferroelectric gate. The field effect induced by the ferroelectric gate has shown the capability to strongly modulate the AMR behavior. Profound qualitative changes of the nature of AMR has been observed, including complete on/off switching of the crystalline component of AMR in (Ga,Mn)(As,P). A workflow for fabrication of integrated FET-type structures comprising a magnetic metal or semiconductor magnetic channel and ferroelectric polymer gate has been successfully developed. Different approaches for enhancement of ferroelectric gate operation were explored including integration of highly resistive hydrophobic interfacial layer and change of polymer composition for lower leakage. A significant increase of the non-volatile gate effect magnitude compared to the state of art was reached via improved quality of the ferroelectric/ferromagnetic interface.

EPFL2015

Chargement

Transfer of Graphene under Ultra-High Vacuum

Darius Constantin Merk

This thesis reports on a novel method for graphene transfer that is fully UHV compatible, which has remained a challenge for a long time due to the necessity of supporting graphene for transfer and most often requiring supporting layer removal post-transfer. Our graphene transfer method is based on the wafer-bonding approach, where graphene is stamped onto a target surface, from a support to which it is weakly bound. We use a bilayer of graphene supported by a teflon tape for the low adhesion between graphene layers and the flexibility of teflon tape to allow adaptability to the target surface.We demonstrate successful transfer onto Cu(100) and Ir(111) single crystal surfaces as well as on gr/Ir(111), thus forming a (partial) graphene bilayer on Ir(111). For in-situ characterization, we use Auger electron spectroscopy and STM. Auger measurements confirm that we are able to transfer an average 0.8-0.9 ML of carbon, by comparison to CVD grown samples. After transfer onto Ir(111), we show that by annealing to 1000 °C, we are able to observe by STM the characteristic moiré pattern formed by CVD grown graphene on Ir(111). Auger spectra show that the graphene-Iridium interaction undergoes a change from physisorption to chemisorption upon annealing. XAS and Raman spectroscopy demonstrate that the annealing step taken post transfer to observe the moiré by STM is only necessary to induce a change in interaction strength but not to heal graphene defects, to increase its domain size, or to make it flat. After transfer onto Cu(100), Raman spectra show that the transferred graphene is of the same quality as the CVD grown graphene before transfer, without further annealing. Comparison of synchrotron based high resolution XAS spectra of transferred gr/Ir(111) to CVD grown samples confirms that the transferred graphene is flat on top of the Ir(111) crystal surface.This enables sample and device fabrication, usually hampered by impurities, to be carried out in UHV leading to fully reproducible results. Clean twisted bilayer graphene samples can be made and studied in UHV. Further, surface science can be extended to the third dimension, by capping layers and continuing growth, etc., all under clean conditions.

EPFL2022

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Towards room-temperature deterministic ferroelectric control of ferromagnetic thin films

Zhen Huang

EPFL2015

Transfer of Graphene under Ultra-High Vacuum

Darius Constantin Merk

EPFL2022