Concept

Claquage (électronique)

Publications associées (324)

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Polarization-enhanced GaN Schottky barrier diodes: Ultra-thin InGaN for high breakdown voltage and low Ron

Elison de Nazareth Matioli, Alessandro Floriduz, Zheng Hao

In this work, we present a concept that leverages the strong piezoelectric polarization field in InGaN, which counteracts the external electric field at reverse bias. We show that despite the smaller InGaN band-gap and lower critical electric field, its st ...

2024

SPAD Developed in 55 nm Bipolar-CMOS-DMOS Technology Achieving Near 90% Peak PDP

Edoardo Charbon, Claudio Bruschini, Ekin Kizilkan, Pouyan Keshavarzian, Won Yong Ha, Francesco Gramuglia, Myung Jae Lee

We present a single-photon avalanche diode (SPAD) developed in 55 nm bipolar-CMOS-DMOS (BCD) technology, which achieves high photon detection probability (PDP) while its breakdown voltage is lower than 20 V. To enhance the PDP performance, the SPAD junctio ...

Ieee-Inst Electrical Electronics Engineers Inc2024

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Dielectric Elastomer Actuators (DEAs) are a type of smart material described as compliant capacitors. They show impressive performances as soft actuators, such as a high strain and fast response. Nonetheless, replicating natural muscle function with DEAs h ...

Society of Photo-Optical Instrumentation Engineers (SPIE)2024

Low-temperature plasmas (LTPs) at atmospheric pressure hold great promise for disinfection and sterilization applications. When compared to traditional sterilization technologies like autoclaving, LTPs may offer several benefits, including reduced energy c ...

EPFL2024

Low-level light detection with high spatial and timing accuracy is a growing area of interest by virtue of applications such as light detection and ranging (LiDAR), biomedical imaging, time-resolved Raman spectroscopy, and quantum applications. Single-phot ...

EPFL2024

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We introduce a new family of single-photon avalanche diodes (SPADs) with enhanced depletion regions in a 55-nm Bipolar-CMOS-DMOS (BCD) technology. We demonstrate how to systematically engineer doping profiles in the main junction and in deep p-well layers ...

Piscataway2024

Universal Casimir attraction between filaments at the cell scale

Anne-Florence Raphaëlle Bitbol

The electromagnetic Casimir interaction between dielectric objects immersed in salted water includes a universal contribution that is not screened by the solvent and therefore long-ranged. Here, we study the geometry of two parallel dielectric cylinders. W ...

Bristol2024

Thermal sensing device and sensory feedback system and method using such thermal sensing device

Silvestro Micera, Solaiman Shokur, Outman Akouissi, Jonathan Louis Muheim, Francesco Iberite

The present invention concerns a thermal sensing device (1) and a sensory feedback system and method using such thermal sensing device, comprising at least one film (19) of electrically insulating polymer defining a global surface of the thermal sensing de ...

2024

Electrode Impact on the Electrical Breakdown of Dielectric Elastomer Thin Films

Herbert Shea, Fabio Beco Albuquerque

Dielectric Elastomer Actuators (DEAs) enable the realization of energy-efficient and compact actuator systems. DEAs operate at the kilovolt range with typically microampere-level currents and hence minimize thermal losses in comparison to low voltage/high ...

Basel2023

Investigations on Caesium Dispersion and Molybdenum Coating on SPIDER Components

Michele Fadone

SPIDER is the 100 keV full-size Negative Ion Source prototype of the ITER Neutral Beam Injector, operating at Consorzio RFX in Padova, Italy. The largest Negative Ion Source in the world, SPIDER generates an RF driven plasma from which Deuterium or Hydroge ...

MDPI2023