Hystérésis magnétique | EPFL Graph Search

L'hystérésis magnétique désigne le phénomène d'hystérésis observé lors de l'aimantation d'un matériau. Ainsi, lorsqu'un champ magnétique externe est appliqué à un matériau ferromagnétique tel le fer, les dipôles magnétiques atomiques s'alignent en fonction de ce dernier. Lorsque le champ est retiré, une partie de l'alignement demeure au sein du matériau. Ce dernier a été aimanté. La relation entre la force du champ (H) et l'aimantation (M) n'est pas linéaire. Ainsi, si le matériau est démagnétisé (H = M = 0), alors la courbe d'aimantation initiale augmente rapidement au début, puis devient asymptotique en atteignant le point de . Si, par la suite, le champ magnétique est réduit de manière monotone, alors M suit une courbe différente, d'où le phénomène d'hystérésis. Lorsque le champ devient nul, l'aimantation est décalée de l'origine d'une valeur égale à la rémanence. Les cycles d'hystérésis ne sont pas limités aux matériaux ferromagnétiques. Ainsi, d'autres mat

Magnetism and metal-organic self-assembly of rare-earth atoms on decoupling layers

Sébastien Reynaud

This thesis presents investigations of magnetic and structural properties of two dimensional metal-organic frameworks and of single atoms, both adsorbed on decoupling layers grown on metal surfaces, with focus on rare earth elements.We first report on a series of attempts at realizing self-assembled metal-organic networks on different decoupling layers, probed by scanning tunneling microscopy. The aim is to produce regular structures with high surface filling factors such that the magnetic properties of the rare earth atoms in the metal-organic networks can be investigated by X-ray ensemble measurements. The combinations of three molecular ligands (QDC, BDA, ZnTPyP) on three insulating layers (MgO, NaCl, graphene) with Tb as rare earth are reported. Of the three decoupling layers, only graphene is found to allow the synthesis of metal-organic structures. We successfully synthesized large islands of a rare earth-QDC coordination complex, with a majority of fivefold coordination of the rare earth atoms. The same structure is reproduced with Dy and Er.X-ray absorption spectroscopy, X-ray magnetic circular and linear dichroism measurements are then carried out on the Dy- and Er-QDC/gr/Ir(111) networks. Compared to single atoms on gr/Ir(111), both Dy and Er change their

4f

occupancy from 4

f^n

4f^{n-1}

and change their easy axis of magnetization. Both species are paramagnetic when incorporated into the metal-organic structure. The last part of the thesis is devoted to the study of Dy, Ho, and Gd on NaCl thin films. All three atoms display

4f

occupancy of the gas phase. The top-Cl adsorption site is determined with scanning tunneling microscopy. The magnetic properties are probed with X-ray absorption spectroscopy, X-ray magnetic circular and linear dichroism. Ho and Gd are paramagnetic. Dy has out-of-plane anisotropy with open hysteresis at non zero magnetic field. However, thermally assisted quantum tunneling of the magnetization prevents remanence at zero field.

EPFL2022

Magnetization Reversal Dynamics in Ferromagnetic Semiconductors

Liza Herrera Diez

This thesis is dedicated to the study of the magnetization reversal dynamics in compressively strained (Ga,Mn)As and differently functionalized (Ga,Mn)As materials. In the first part the domain wall dynamics of pure (Ga,Mn)As/GaAs materials is in the focus. The changes in the magnetic anisotropy energy landscape occurring as a function of temperature are monitored in detail by different experimental techniques. These measurements provide the necessary information for the identification of the temperature ranges corresponding to different magnetic anisotropy regimes. Knowing the biaxial anisotropy and uniaxial anisotropy dominated regimes the dependence of the domain wall dynamics on the magnetic anisotropy landscape is studied. Critical changes in domain wall alignment observed by Kerr microscopy are found upon changing from biaxial to uniaxial anisotropy. These changes could be partially attributed to the tendency of the system to minimize magnetic free poles at the domain boundaries. To complement the space resolved studies of the magnetization reversal, magnetic time relaxation effects are addressed. In particular the magnetic aftereffect in (Ga,Mn)As/GaAs is studied in detail. The irreversible aftereffect is evidenced as a critical reduction of the domain wall velocity with time under a constant applied magnetic field below coercivity. This time relaxation is tracked as a function of both time and magnetic field. The measurements show that the overall relaxation is composed of two relaxation processes acting in parallel at short and long time scales. By fitting these experimental results the values of the relaxation times of both relaxation processes were obtained. By this modeling also the values of the activation volumes for two independent (Ga,Mn)As materials are estimated. In the second part of this thesis the possibilities of tuning the electrical and magnetic properties of (Ga,Mn)As by volume and surface treatments are explored. As for the volume modification, oxygen species were incorporated into the (Ga,Mn)As films by means of exposure to an oxygen plasma. The incorporation of oxygen was evidenced by depth profile X-ray photoelectron spectroscopy. This treatment is found to weaken the ferromagnetism, visible as a reduction in the Curie temperature, and to hinder the electrical transport evidenced as an increase in the electrical resistance. In agreement with theories accounting for the hole mediated ferromagnetism in (Ga,Mn)As this behaviour was related to a hole compensation mechanism arising from the presence of oxygen impurities sitting in interstitial positions of the (Ga,Mn)As Zinc blende structure. In the last part, the modulation of the electrical and magnetic properties via surface functionalization is presented. The effects produced by the adsorption of molecular species on (Ga,Mn)As are similar to those found after oxygenation, namely a strong weakening of the magnetic properties and an increase in the values of the electrical resistance. However, in this case the distinctive feature is provided by the possibility of regulating the hole quenching effect by exploiting the additional degree of freedom provided by the chemical properties of the adsorbates. The adsorbate chosen for these experiments are dye molecules that absorb light in the visible range, in this way allowing for a light modulated interaction with the substrate. Using this concept is was possible to observe a modulation of the ferromagnetic transition temperature, the coercive field and the electrical resistance upon illumination. These observations provide a proof of principle for the realization of photo-sensitized (Ga,Mn)As devices where the magnetic properties can be regulated by light.

EPFL2011

Magnonic crystals with reconfigurable magnetic defects for spin-based microwave electronics

Korbinian Baumgärtl

Collective spin excitations can propagate in magnetically ordered materials in the form of waves. These so-called spin waves (SWs) or magnons are promising for low-power beyond-CMOS information processing, which does not rely anymore on the lossy movement of electric charges. SWs in the few GHz frequency regime possess nanoscale wavelengths about five orders of magnitude smaller than electromagnetic waves of the same frequency. This property makes SWs ideally suited for application in microwave technology, essential for on-chip processing of wireless telecommunication signals. In this thesis, three crucial challenges relevant for the technological application of SWs are addressed: First, to functionalize SWs and exploit their small wavelengths, it is necessary to control them at the nanoscale. Here, periodically nanostructured materials, denoted magnonic crystals, are promising, as they allow to tailor the band structure of SWs. We report on SWs propagating in a prototypical one-dimensional magnonic crystal consisting of dipolarly coupled magnetic nanostripes. The remanent magnetization of individual stripes was designed to be bistable along the long axis. By magnetizing an individual stripe in opposite direction to the others, we created a magnetic defect. We measured by means of all-electrical spin wave spectroscopy and Brillouin light scattering microscopy phase and amplitude of SWs trespassing the defect. We found that SW phases and amplitudes were modified at the nanoscale, and phase shifts could be tuned by an applied bias magnetic field. Using micromagnetic simulations, we identified specific bias fields for which phase shifts of Pi are achieved without suppressing SW amplitudes. This result is highly relevant for the implementation of logic gates based on interference of phase-controlled SWs. We further measured propagation of short-waved SWs in an antiferromagnetically ordered one-dimensional magnonic crystal, where every second stripe was magnetized in opposite direction. We found a band gap closing at the Brillouin zone boundary when no magnetic bias field was applied. Our observations are promising for reprogrammable microwave filters capable of adjusting stop- and passband. Second, we address how long-waved electromagnetic waves can be coupled efficiently to nanoscale SWs. We demonstrate by space- and time-resolved scanning X-ray transmission measurements, that excited nanogratings allow to transfer their reciprocal lattice vector and multiple of it to an underlying magnetic thin film, in which nanoscale propagating SWs are launched. Additionally, we discovered a second method for short-waved SW generation based on magnetic microwave guides. This approach is easy to fabricate and relies on the adaption of the SW wavelength to a changing effective magnetic field. Efficient coupling of electromagnetic waves to nanoscale SWs promises an unprecedented miniaturization of microwave components. Third, we found that the magnetization direction of bistable nanomagnets can be switched by propagating SWs in an underlying magnetic thin film when a threshold amplitude is reached. This discovery is promising for the realization of a non-volatile magnonic memory, which stores SW amplitudes. A possible application are SW logic gates, which encode the outcome of a logic operation in the output SW amplitude. Magnonic memory would allow for storing these amplitudes directly, without requiring lossy conversion into the electrical domain.

EPFL2021