Dimitrios Tsamados

Cette personne n’est plus à l’EPFL

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Publications associées (23)

Analytical Modeling of the Suspended-Gate FET and Design Insights for Low-Power Logic

Mihai Adrian Ionescu, Yogesh Singh Chauhan, Dimitrios Tsamados, Christoph Eggimann

An analytical model for the suspended-gate field-effect transistor (SGFET), dedicated to the dc analysis of SGFET logic circuits, is developed. The model is based on the depletion approximation and expresses the pull-in voltage, the pull-out voltage, and t ...

2008

Finite element analysis and analytical simulations of Suspended Gate-FET for ultra-low power inverters

Mihai Adrian Ionescu, Yogesh Singh Chauhan, Dimitrios Tsamados, Christoph Eggimann

This paper proposes, the investigation of the Suspended Gate Field-Effect Transistor (SG-FET) small-slope switch based on a hybrid numerical simulation approach combining ANSYSTM Multiphysics and ISE-DESSISTM in a self-consistent system. The proposed numer ...

2008

Compact Modeling of Suspended Gate FET

Mihai Adrian Ionescu, Michel Declercq, Yogesh Singh Chauhan, Dimitrios Tsamados, Nicolas Abelé, Christoph Eggimann

For the first time, a compact model for suspended gate (SG) FET valid for entire bias range is proposed. The model is capable of simulating both pull-in and pull-out effects, which are the two important phenomena of this device. A novel hybrid numerical si ...

2008

Micro-Electro-Mechanical Metal-Air-Insulator-Semiconductor Diode Switch

Mihai Adrian Ionescu, Didier Bouvet, Dimitrios Tsamados, Donatello Acquaviva

The design, fabrication and characterization of Micro-electro-mechanical metal-air-insulator-semiconductor (MEM-MAIS) diode switch are originally reported. An abrupt switching from off-state to Fowler-Nordheim tunneling current in on-state is induced by th ...

2008

Double gate movable body Micro-Electro-Mechanical FET as hysteretic switch: Application to data transmission systems

Mihai Adrian Ionescu, Maher Kayal, Cédric Meinen, Dimitrios Tsamados, Daniel Grogg, Hüseyin Cumhur Tekin

This paper reports on the fabrication, experimental characterization and data transmission application of a double-gate movable body FET. As its name suggests, the proposed movable-body Micro-Electro-Mechanical FET (MB-MEMFET) is a hybrid MEMS-semiconducto ...

2008

Laterally vibrating-body double gate MOSFET with improved signal detection

Mihai Adrian Ionescu, Marco Mazza, Dimitrios Tsamados, Daniel Grogg, Nicoleta-Diana Ciressan, Hüseyin Cumhur Tekin

Laterally vibrating-body double-gate MOSFET that shows a +30 dB signal increase compared to an identical resonator operating with pure capacitive detection is reported. The double-gate MOSFET is fabricated on SOI substrate with silicon film thickness of 1. ...

2008

Multi-gate vibrating-body field effect transistor (VB-FETs)

Mihai Adrian Ionescu, Marco Mazza, Dimitrios Tsamados, Daniel Grogg

This paper reports on the design, fabrication and detailed characteristics of multi-gate vibrating-body field effect transistors (VB-FETs). Double-gate and four-gate VB-FETs with resonance frequencies of 2 MHz and 71 MHz, respectively, are successfully dem ...

2008

Pentacene - SiO2 interface: Role of the environment prior to pentacene deposition and its impact on TFT DC characteristics

Jürgen Brugger, Mihai Adrian Ionescu, Dimitrios Tsamados, Katrin Sidler Arnet, Nenad Cvetkovic

In this paper we report on the effect of the environment on the SiO₂/pentacene interface. Two batches of bottom-contact pentacene thin-film transistors have been fabricated with a 100 nm thick SiO₂ as dielectric. Considerable shifts of the threshold voltag ...

IEEE2008

Nano-gap high quality factor thin film SOI MEM resonators

Mihai Adrian Ionescu, Marco Mazza, Dimitrios Tsamados, Daniel Grogg, Nicoleta-Diana Ciressan, Hüseyin Cumhur Tekin

A 1.25 m thin SOI micro-electro-mechanical (MEM) resonator with a quality factor of 100’000 at 24.6 MHz is demonstrated. A nanogap fabrication process allows the fabrication of < 200 nm gaps, allowing for low polarization voltages. A motional resistance of ...

2008

MEMS tunable capacitors with fragmented electrodes and rotational electro-thermal drive

Mihai Adrian Ionescu, Alexander Mehdaoui, Dimitrios Tsamados

Springer, Springer-Verlag2007

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Pentacene - SiO2 interface: Role of the environment prior to pentacene deposition and its impact on TFT DC characteristics

Jürgen Brugger, Mihai Adrian Ionescu, Dimitrios Tsamados, Katrin Sidler Arnet, Nenad Cvetkovic

IEEE2008