Publications de Tugba Demirci | EPFL Graph Search

Performance improvement of chip-level CMOS-integrated ReRAM cells through material optimization

Elmira Shahrabi, Thomas La Grange, Yusuf Leblebici, Tugba Demirci

The integration of the resistive random access memory (ReRAM) with CMOS logic circuitry provides a solution to scaling limitations, and offers promising candidates for use in next generation computing applications. It is challenging to realize a reliable, ...

ELSEVIER SCIENCE BV2019

A Single-chip 2048x1080 Resolution 32fps 380mW Trinocular Disparity Estimation Processor in 28nm CMOS Technology

Yusuf Leblebici, Abdulkadir Akin, Tugba Demirci, Jonathan Emmanuel D Narinx

This paper presents a single-chip trinocular disparity estimation processor, capable of computing in real-time up to 2048×1080 resolution depth maps at 32fps with up to 256-pixel disparity range using two/three CMOS camera sensors. The most important featu ...

2017

Resistive Switching Element and Use Thereof

Giovanni De Micheli, Davide Sacchetto, Yusuf Leblebici, Pierre-Emmanuel Julien Marc Gaillardon, Shashi Kanth Bobba, Tugba Demirci

A bipolar resistive switching device including an electrically conductive bottom electrode, a stack of transition metal oxides layers, a number of transition metal oxide layers being equal or greater than 2, the stack including: at least one MOx layer, at ...

2016

Co-design of ReRAM Passive Crossbar Arrays Integrated in 180nm CMOS Technology

Giovanni De Micheli, Davide Sacchetto, Yusuf Leblebici, Michele De Marchi, Pierre-Emmanuel Julien Marc Gaillardon, Jury Sandrini, Tugba Demirci, Maxime Victor Thammasack, Marios Barlas

This work presents the co-integration of resistive random access memory crossbars within a 180nm Read-Write CMOS chip. TaOx-based ReRAMs have been fabricated and characterized with materials and process steps compatible with the CMOS Back-End-of ...

Institute of Electrical and Electronics Engineers2016

Chip-Level CMOS Co-Integration of ReRAM-Based Non-Volatile Memories

Elmira Shahrabi, Yusuf Leblebici, Jury Sandrini, Tugba Demirci, Mahmoud Hadad, Behnoush Attarimashalkoubeh

This work reports a technique to fabricate ReRAM crossbar arrays co-integrated with fully finished 180 nm CMOS technology chips. The proposed integration method enables low- cost ReRAM-CMOS integration and allows the rapid prototyping of complete memory sy ...

Ieee2016

Full Swing 20 GHz Frequency Divider with 1 V Supply Voltage in FD-SOI 28 nm Technology

Yusuf Leblebici, Tugba Demirci, Duygu Kostak, Hasene Gülperi Özsema

In this paper we present the design of a pro- grammable frequency divider in 28 nm FD-SOI CMOS technology. It consists of the cascade of a divide-by-2 cell and divide- by-2/3 blocks. The final circuit is capable of dividing by even numbers between 128 and ...

2015

3.6 GHz CMOS Ring Oscillator with Low Tune Voltage Sensitivity and Temperature Compensation

Yusuf Leblebici, Tugba Demirci, Hasene Gülperi Özsema

In this paper we present the design of a temperature compensated low-tune-voltage-sensitive CMOS ring oscillator in 40nm standard CMOS technology. The oscillator has an overall frequency range from 3.1 GHz to 3.6 GHz. The effect of temperature variations o ...

2015

Low-Voltage Read/Write Circuit Design for Transistorless ReRAM Crossbar Arrays in 180nm CMOS Technology

Davide Sacchetto, Yusuf Leblebici, Jury Sandrini, Tugba Demirci, Maxime Victor Thammasack

This paper presents a read-write design solution for passive ReRAM crossbar memory arrays to overcome the sneak current paths problem. The proposed circuitry includes an auto-calibration feature to overcome the sneak current effects during the READ operati ...

2015

Heterogeneous Integration of ReRAM Crossbars in 180nm CMOS BEoL Process

Giovanni De Micheli, Davide Sacchetto, Yusuf Leblebici, Pierre-Emmanuel Julien Marc Gaillardon, Jury Sandrini, Tugba Demirci, Maxime Victor Thammasack

This work reports on a heterogeneous integration of resistive memories into the Back-End-of-the-Line of 180nm standard CMOS foundry chips. A TaOx-based ReRAM technology with materials and processes fully CMOS compatible has been developed and characterized ...

Elsevier2015

Cmos compatible non-volatile latch and d-flip flop using resistive switching materials

Davide Sacchetto, Yusuf Leblebici, Tugba Demirci

A non-volatile latch circuitry, comprising a Re RAM cell configured to store a final value of the non-volatile latch circuitry; a data selection circuitry configured to connect or disconnect a data input to a plus voltage node and a minus voltage node of t ...

2014