Publications de Gwénolé Jean Jacopin

Molecular Origin of the Asymmetric Photoluminescence Spectra of CsPbBr3 at Low Temperature

Michael Graetzel, Ursula Röthlisberger, Ariadni Boziki, Mohammad Ibrahim Dar, Gwénolé Jean Jacopin

CsPbBr3 has received wide attention due to its superior emission yield and better thermal stability compared to other organic-inorganic lead halide perovskites. In this study, through an interplay of theory and experiments, we investigate the molecular ori ...

2021

Temperature Dependent Exciton Funnel Dynamics in Uniform Strain Gradient Field Observed by Time-Resolved Photoluminescence

Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Gwénolé Jean Jacopin, Mehran Shahmohammadi

Elastic strain engineering is an important way to reversibly tune the properties of micro/nanoscale semiconductors for promising applications in the emerging advanced nanotechnologies, such as the strain enhanced high-mobility transistors, nanogenerators, ...

WILEY-V C H VERLAG GMBH2021

Cyclopentadithiophene-Based Hole-Transporting Material for Highly Stable Perovskite Solar Cells with Stabilized Efficiencies Approaching 21%

Michael Graetzel, Shaik Mohammed Zakeeruddin, Mohammad Ibrahim Dar, Gwénolé Jean Jacopin, Neha Arora, Yuhang Liu, Seckin Akin, Ryusuke Uchida, Michael Bauer

There is an urge to develop new hole-transporting materials (HTMs) for perovskite solar cells (PSCs), which can yield comparable power conversion efficiencies (PCEs) yet mitigate the issue of stability associated with the state-of-the-art HTM Spiro-MeOTAD. ...

AMER CHEMICAL SOC2020

Impact of defects on Auger recombination in c-plane InGaN/GaN single quantum well in the efficiency droop regime

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Yixing Chen, Gwénolé Jean Jacopin, Wei Liu, Camille Haller, Thomas Fjord Kjaersgaard Weatherley

We study the impact of non-radiative defects on Auger recombination in c-plane InGaN/GaN single quantum wells (SQWs) in the efficiency droop regime using high injection time-resolved photoluminescence. The defect density in the SQW is controlled by tuning ...

AMER INST PHYSICS2020

Impact of alloy disorder on Auger recombination in single InGaN/GaN core-shell microrods

Benoît Marie Joseph Deveaud, Gwénolé Jean Jacopin, Wei Liu, Georg Rossbach, Christian Mounir

We study the influence of local inhomogeneities on carrier recombination dynamics in single InGaN/GaN core-shell microrods (MRs) by means of time-resolved microphotoluminescence (TRPL) at 10 K. At low carrier density (similar to 10(11) cm(-2)), the carrier ...

2019

Electroluminescence of Single InGaN/GaN Micropyramids

Hua Zhang, Gwénolé Jean Jacopin

The results of the fabrication of technological regimes of formation and the study of the optical properties of light emitting diodes (LED) micropyramids based on InGaN/GaN are presented. The structures were formed by the method of Metalorganic vapour-phas ...

PLEIADES PUBLISHING INC2019

Optical absorption and oxygen passivation of surface states in III-nitride photonic devices

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Ian Michael Rousseau, Gwénolé Jean Jacopin, Gordon Jens Callsen

2018

Spatially dependent carrier dynamics in single InGaN/GaN core-shell microrod by time-resolved cathodoluminescence

Benoît Marie Joseph Deveaud, Gwénolé Jean Jacopin, Wei Liu, Georg Rossbach

AIP American Institute of Physics2018

Insights about the Absence of Rb Cation from the 3D Perovskite Lattice: Effect on the Structural, Morphological, and Photophysical Properties and Photovoltaic Performance

Michael Graetzel, Shaik Mohammed Zakeeruddin, Mohammad Ibrahim Dar, Gwénolé Jean Jacopin, Neha Arora, Ryusuke Uchida, Silvia Binet

Efficiencies >20% are obtained from the perovskite solar cells (PSCs) employing Cs+ and Rb+ based perovskite compositions; therefore, it is important to understand the effect of these inorganic cations specifically Rb+ on the properties of perovskite struc ...

WILEY-V C H VERLAG GMBH2018

GaN surface as the source of non-radiative defects in InGaN/GaN quantum wells

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Denis Martin, Gwénolé Jean Jacopin, Camille Haller, Wei Liu

Blue light-emitting diodes based on III-nitride semiconductors are nowadays widely used for solid-state lighting. They exhibit impressive figures of merit like an internal quantum efficiency close to 100%. This value is intriguing when considering the high ...

2018