Publications de Ali Saeidi | EPFL Graph Search

Ultra-High Sensitivity Silicon Nanowire Array Biosensor Based on a Constant-Current Method for Continuous Real-Time pH and Protein Monitoring in Interstitial Fluid

Mihai Adrian Ionescu, Ali Saeidi, Yann Christophe Sprunger, Luca Capua

In this paper we demonstrate ultra-high sensitivity silicon nanowires pH and protein sensing on the same Silicon nanowire array platform by using a constant current method and monitoring the drain voltage as function of analyte concentration. The injected ...

IEEE2023

Ferroelectric Junctionless Double-Gate Silicon-On-Insulator FET as a Tripartite Synapse

Mihai Adrian Ionescu, Igor Stolichnov, Ali Saeidi, Matteo Cavalieri, Carlotta Gastaldi, Sadegh Kamaei Bahmaei

In this work, we report the concept and experimentally demonstrate the first tunable ferroelectric (Fe) junctionless (JL) transistor (Fe-JLFET), capable of emulating the functionality of biological tri-partite synapses, which is an artificial three-termina ...

Institute of Electrical and Electronics Engineers2023

Ferroelectric gating of two-dimensional semiconductors for the integration of steep-slope logic and neuromorphic devices

Jürgen Brugger, Mihai Adrian Ionescu, Ali Saeidi, Xia Liu, Carlotta Gastaldi, Sadegh Kamaei Bahmaei

The co-integration of logic switches and neuromorphic functions could be used to create new computing architectures with low power consumption and novel functionalities. Two-dimensional (2D) semiconductors and ferroelectric materials could be potentially u ...

NATURE PORTFOLIO2023

Negative Capacitance in HfO2 Gate Stack Structures With and Without Metal Interlayer

Mihai Adrian Ionescu, Igor Stolichnov, Ali Saeidi, Eamon Patrick O'Connor, Francesco Bellando, Matteo Cavalieri, Carlotta Gastaldi

In this work, we experimentally explore and compare FET gate stacks with and without an inner metal plane between a linear dielectric (SiO2) and a ferroelectric layer (Si-doped HfO2) operating in the negative capacitance (NC) regime. The use of nanosecond- ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Fully integrated Si:HfO2 Negative Capacitance 2D-2D WSe2/SnSe2 Subthermionic Tunnel FETs

Jürgen Brugger, Mihai Adrian Ionescu, Ali Saeidi, Clara-Fausta Moldovan, Xia Liu, Carlotta Gastaldi, Sadegh Kamaei Bahmaei

We report the first experimental demonstration and performance characterization of a fully integrated negative capacitance (NC) WSe2/SnSe2 p-type Tunnel FETs (TFETs), validating the use of NC as a technology booster to achieve a significantly improved sub- ...

IEEE2022

Intrinsic switching in Si-doped HfO2: A study of Curie-Weiss law and its implications for negative capacitance field-effect transistor

Mihai Adrian Ionescu, Igor Stolichnov, Ali Saeidi, Teodor Rosca, Eamon Patrick O'Connor, Matteo Cavalieri, Carlotta Gastaldi, Sadegh Kamaei Bahmaei

HfO2-based ferroelectrics are considered a promising class of materials for logic and memory applications due to their CMOS compatibility and ferroelectric figures of merit. A steep-slope field-effect-transistor (FET) switch is a device for logic applicati ...

AMER INST PHYSICS2021

Gate energy efficiency and negative capacitance in ferroelectric 2D/2D TFET from cryogenic to high temperatures

Mihai Adrian Ionescu, Ali Saeidi, Teodor Rosca, Matteo Cavalieri, Carlotta Gastaldi, Luca Capua, Sadegh Kamaei Bahmaei

We report the fabrication process and performance characterization of a fully integrated ferroelectric gate stack in a WSe2/SnSe2 Tunnel FETs (TFETs). The energy behavior of the gate stack during charging and discharging, together with the energy loss of a ...

NATURE PORTFOLIO2021

Nanowire Tunnel FET with Simultaneously Reduced Subthermionic Subthreshold Swing and Off-Current due to Negative Capacitance and Voltage Pinning Effects

Mihai Adrian Ionescu, Igor Stolichnov, Ali Saeidi, Teodor Rosca, Matteo Cavalieri

Nanowire tunnel field-effect transistors (TFETs) have been proposed as the most advanced one-dimensional (1D) devices that break the thermionic 60 mV/decade of the subthreshold swing (SS) of metal oxide semiconductor field-effect transistors (MOSFETs) by u ...

AMER CHEMICAL SOC2020

An Experimental Study on Mixed-Dimensional 1D-2D van der Waals Single-Walled Carbon Nanotube-WSe2 Hetero-Junction

Mihai Adrian Ionescu, Farzan Jazaeri, Ali Saeidi, Matteo Cavalieri, Nicolò Oliva, Benjamin Paul Johanès Gabriel Lambert, Sadegh Kamaei Bahmaei, Amin Rassekh

This experimental study investigates a novel multi-functional one dimensional-two dimensional (1D-2D) heterojunction made of two different band-gap semiconductors, i.e. single-walled carbon nanotube (SWCNT) and tungsten di-selenide (WSe2). The proposed ult ...

Institute of Electrical and Electronics Engineers2020

Subthermionic negative capacitance ion sensitive field-effect transistor

Mihai Adrian Ionescu, Ali Saeidi, Francesco Bellando, Carlotta Gastaldi

One of the main advantages of Ion-Sensitive Field-Effect Transistor (ISFET) technology is the capability to exploit technological advancements initially developed for conventional FETs for logic applications, such as the employ of high-k dielectrics for th ...

2020