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Jun Ma

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The 0.1 < z < 1.65 evolution of the bright end of the [O II] luminosity function

Jean-Paul Richard Kneib, Johan Comparat, Timothée Guy Olivier Delubac, Jun Ma, David Schlegel, Johan Richard, Zhenyu Wu

We present the [O II] (lambda lambda 3729; 3726) luminosity function measured in the redshift range 0.1 < z < 1.65 with unprecedented depth and accuracy. Our measurements are based on medium resolution flux-calibrated spectra of emission line galaxies with ...

EDP Sciences2015

Field Plate Design for Low Leakage Current in Lateral GaN Power Schottky Diodes: Role of the Pinch-Off Voltage

Elison de Nazareth Matioli, Jun Ma, Dante Colao Zanuz

In this letter, we demonstrate a general model to reduce the reverse leakage current (I-R) in high-voltage AlGaN/GaN Schottky diodes (SBDs) by engineering the pinchoff voltage (V-p) of their field plates (FPs). The maximum voltage drop at the Schottky junc ...

Institute of Electrical and Electronics Engineers2017

High Performance Tri-gate GaN Power MOSHEMTs on Silicon Substrate

Elison de Nazareth Matioli, Jun Ma

We demonstrate high-performance GaN power metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs) on silicon substrate based on a nanowire tri-gate architecture. The common issue of partial removal of carriers by nanowire etching in GaN tri ...

Institute of Electrical and Electronics Engineers2017

900 V Reverse-Blocking GaN-on-Si MOSHEMTs With a Hybrid Tri-Anode Schottky Drain

Elison de Nazareth Matioli, Jun Ma, Minghua Zhu

In this letter, we present high-performance GaN-on-Si metal-oxide-semiconductor high electron mobility transistors with record reverse-blocking (RB) capability. By replacing the conventional ohmic drain with a hybrid tri-anode Schottky drain, a high revers ...

Institute of Electrical and Electronics Engineers2017

Slanted Tri-gates for High-Voltage GaN Power Devices

Elison de Nazareth Matioli, Jun Ma

In this letter, we introduce and demonstrate the concept of slanted tri-gates to enhance the breakdown voltage (V-BR) in lateral GaN power devices. Conventionally, field plates (FPs) are used to enhance the V-BR by distributing more homogeneously the elect ...

Institute of Electrical and Electronics Engineers2017

High-Voltage and Low-Leakage AlGaN/GaN Tri-Anode Schottky Diodes With Integrated Tri-Gate Transistors

Elison de Nazareth Matioli, Jun Ma

We present AlGaN/GaN nanostructured Schottky barrier diodes (SBDs) on silicon substrate with high breakdown voltage (V-BR) and low reverse leakage current (I-R), based on a hybrid of tri-anode and tri-gate architectures. The fabricated SBDs presented a sma ...

Institute of Electrical and Electronics Engineers2017

Improved electrical and thermal performances in nanostructured GaN devices

Elison de Nazareth Matioli, Jun Ma

IEEE2016