Publications de Francesco Bellando

Negative Capacitance in HfO2 Gate Stack Structures With and Without Metal Interlayer

Mihai Adrian Ionescu, Igor Stolichnov, Ali Saeidi, Eamon Patrick O'Connor, Francesco Bellando, Matteo Cavalieri, Carlotta Gastaldi

In this work, we experimentally explore and compare FET gate stacks with and without an inner metal plane between a linear dielectric (SiO2) and a ferroelectric layer (Si-doped HfO2) operating in the negative capacitance (NC) regime. The use of nanosecond- ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Sensitivity, Noise and Resolution in a B -Modified Foundry-Made ISFET with Miniaturized Reference Electrode for Wearable Point-of-Care Applications

Mihai Adrian Ionescu, Junrui Zhang, Francesco Bellando, Pierpaolo Palestri, Luca Selmi

Ion-sensitive field-effect transistors (ISFETs) form a high sensitivity and scalable class of sensors, compatible with advanced complementary metal-oxide semiconductor (CMOS) processes. Despite many previous demonstrations about their merits as low-power i ...

2021

Monolithically Integrated Catalyst-Free High Aspect Ratio InAs-on-Insulator (InAsOI) FinFETs for pH Sensing

Mihai Adrian Ionescu, Junrui Zhang, Maneesha Rupakula, Francesco Bellando, Fabien Patrick Wildhaber, Clarissa Convertino

In this work, we report a novel Indium Arsenide-on-insulator (InAsOI) FinFET platform designed with record high aspect ratio that favors the use of the devices as charge sensors. InAs has very high mobility among III-V semiconductors and an intrinsic surfa ...

2020

Subthermionic negative capacitance ion sensitive field-effect transistor

Mihai Adrian Ionescu, Ali Saeidi, Francesco Bellando, Carlotta Gastaldi

One of the main advantages of Ion-Sensitive Field-Effect Transistor (ISFET) technology is the capability to exploit technological advancements initially developed for conventional FETs for logic applications, such as the employ of high-k dielectrics for th ...

2020

Negative capacitance semiconductor sensor

Mihai Adrian Ionescu, Ali Saeidi, Francesco Bellando

The present invention relates to a semiconductor sensor (1) comprising: a source element (17, 19); a drain element (21, 23); a semiconductor channel element (25) between the source element (17, 19) and the drain element (21, 23) for forming an electrically ...

2020

Sweat monitoring with CMOS compatible technology: ISFETS and beyond

Francesco Bellando

In recent years, sweat has gained increasing attention from the scientific community as a new analyte for health monitoring. The main advantage with respect to the "Gold Standard" for laboratory analysis, i.e. blood, is of course the possibility of perform ...

EPFL2020

Apparatus for non-invasive sensing of biomarkers in human sweat

Mihai Adrian Ionescu, Erick Antonio Garcia Cordero, Johan Frédéric Longo, Hoël Maxime Guérin, Francesco Bellando, Fabien Patrick Wildhaber

Presented herein are devices for collecting and/or channeling a biofluid (e.g., sweat, tears, saliva) and detecting and/or quantifying one or more biomarkers in the biofluid. The biomarker(s) may include, for example, ions, salts thereof, hormones and/or s ...

2019

Monolithically integrated catalyst-free High Aspect Ratio InAs-On-Insulator (InAsOI) FinFETs for pH sensing

Mihai Adrian Ionescu, Kirsten Emilie Moselund, Junrui Zhang, Maneesha Rupakula, Francesco Bellando, Fabien Patrick Wildhaber, Clarissa Convertino

In this work, we report a novel Indium Arsenide-on-insulator (InAsOI) FinFET platform designed with record high aspect ratio that favor the use of the devices as charge sensors. InAs has very high mobility among III-V semiconductors and an intrinsic surfac ...

IEEE2019

Capillary flow device for bio-fluid collection with semiconductor sensors

Mihai Adrian Ionescu, Erick Antonio Garcia Cordero, Hoël Maxime Guérin, Francesco Bellando

An on-body wearable bio-fluid collection and sensing device including an interface or interface surface comprising at least one biocompatible material for contacting a bodily part; at least one inlet for receiving the bio-fluid, at least one outlet for eva ...

2019

Sweat Biomarker Sensor Incorporating Picowatt, Three-Dimensional Extended Metal Gate Ion Sensitive Field Effect Transistors

Mihai Adrian Ionescu, Junrui Zhang, Erick Antonio Garcia Cordero, Maneesha Rupakula, Hoël Maxime Guérin, Francesco Bellando, Fabien Patrick Wildhaber, Guillaume Charles Henri Herment

Ion sensitive field effect transistors (ISFETs) form a very attractive solution for wearable sensors due to their capacity for ultra-miniaturization, low power operation, and very high sensitivity, supported by complementary metal oxide semiconductor (CMOS ...

2019