Personne
Pirouz Sohi
Cette personne n’est plus à l’EPFL
Publications associées (7)
Beyond 8 THz Displacement-field Nano-switches for 5G and 6G Communications
Mihai Adrian Ionescu, Elison de Nazareth Matioli, Pirouz Sohi, Riyaz Mohammed Abdul Khadar
The rapid progress in high capacity communication systems is reaching extremely high data rates of 100 Gb s−1, which demands electronic switches with cut-off frequencies well above 1 THz. The excellent electron transport properties of III-V heterojunctions ...
IEEE2022P-GaN Tri-Gate MOS Structure for Normally-Off GaN Power Transistors
Elison de Nazareth Matioli, Pirouz Sohi, Jun Ma, Luca Nela, Catherine Erine, Minghua Zhu
In this letter, we present a new concept for normally-off AlGaN/GaN-on-Si MOS-HEMTs based on the combination of p-GaN, tri-gate and MOS structures to achieve high threshold voltage (V-TH) and low on-resistance (R-ON). The p-GaN is used to engineer the band ...
2021p-NiO Junction Termination Extensions for High Voltage Vertical GaN Devices
Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Alessandro Floriduz, Pirouz Sohi, Luca Nela, Riyaz Mohammed Abdul Khadar, Catherine Erine, Taifang Wang
In this paper, we illustrate the use of RF-sputtered p-NiO to fabricate Junction Termination Extensions (JTEs) for high-performance vertical GaN-on-Si Schottky Barrier Diodes (SBDs). The GaN epitaxial structures were grown on 6-inch Si wafers by MOCVD. The ...
IEEE2021Impact of Strain and Alloy Disorder on the Electronic Properties of III-Nitride Based Two-dimensional Electron Gases
Over the past 20 years, III-nitrides (GaN, AlN, InN and their alloys) have proven to be an excellent material group for electronic devices, in particular, for high electron mobility transistors (HEMTs) operating at high frequency and high power. This is ma ...
EPFL2019Gas pressure measurement device
Ian Michael Rousseau, Pirouz Sohi
The present invention concerns vacuum pressure gauge or gas pressure measurement device comprising a polar semiconductor structure, at least one light source for illuminating a surface of the polar semiconductor structure, measurement means configured to m ...
2019Low-temperature growth of n(++)-GaN by metalorganic chemical vapor deposition to achieve low-resistivity tunnel junctions on blue light emitting diodes
Nicolas Grandjean, Jean-François Carlin, Pirouz Sohi, Yao Chen, Mauro Mosca
We report on low-resistivity GaN tunnel junctions (TJ) on blue light-emitting diodes (LEDs). Si-doped n(++)-GaN layers are grown by metalorganic chemical vapor deposition directly on LED epiwafers. Low growth temperature (
IOP PUBLISHING LTD2019Critical thickness of GaN on AlN: impact of growth temperature and dislocation density
Nicolas Grandjean, Pirouz Sohi, Denis Martin
Critical thickness and strain relaxation of c-plane GaN layers grown by molecular beam epitaxy on AlN were studied as a function of growth temperature and threading dislocation density (TDD). For this purpose we used AlN/sapphire templates and AlN single c ...
2017