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Integrated circuit packaging technology has become a prime design consideration for the develop-ment of electronic system concepts. One key issue is the bonding layer between chip and substrate. Currently, high-lead solder materials are being used, which a ...
Linear crystal defects called dislocations are one of the most fascinating concepts in materials science that govern mechanical and optoelectronic properties of many materials across a broad range of application. Three-dimensional (3-D) study of dislocatio ...
We study in this thesis the structural origin of defect insensitive light emission in indium containing group-III nitride ternary alloys grown on sapphire, which are the active materials for the commercially available high brightness blue diodes. These str ...
Ferritic/martensitic steels are candidate materials for fusion reactor structural components, liquid metal containers of spallation neutron sources, and accelerator driven systems, with good radiation resistance and thermo-mechanical properties. However, e ...
Polycrystalline materials with crystallite diameters below hundred nanometer exhibit extraordinary strength which goes along with a decrease in ductility. In order to tailor tough materials, which combine strength and ductility, the underlying deformation ...
Body-centered cubic metals are of high technological interest: for example tungsten as potential plasma facing component in future fusion reactors, molybdenum employed in aircraft parts, niobium as superconducting magnets, etc. The characteristics of their ...
The gamma surfaces in the pyramidal I {1 -1 0 1} and II {1 1 -2 2} planes for hexagonal close packed Mg have been calculated using two embedded-atom-method potentials and by ab initio methods, and reasonable agreement is obtained for key stacking fault ene ...
Evidence of composition fluctuations around threading dislocations at scales ranging from atomic distances to tens of nanometers is provided by z-contrast imaging, strain measurement, and energy dispersive x-ray spectroscopy in AlxIn1-x N/GaN heterostructu ...