Publication
In this paper we present the top-down fabrication of gate-all-around (GAA) and body-tied @W-gate devices by a combination of etching and oxidation steps resulting in a local silicon-on-insulator structure. The GAA has advantages in terms of enhanced current drive, whereas the body-strapped structures allow for active leakage control and in some cases impact ionization devices. We demonstrate an inverter fabricated along a single silicon rib. The inverter consists of two enhancement mode body-strapped @W-gate NMOS transistors. Static and dynamic experiments demonstrate a fully functional inverter with the output experiencing V"D"D/2 voltage swing, as expected for an NMOS inverter with identical driver and load dimensions. In addition, we propose the use of these devices for cross-bar memory addressing.
Giovanni De Micheli, Mathias Soeken, Dewmini Sudara Marakkalage, Eleonora Testa, Heinz Riener
Edoardo Charbon, Claudio Bruschini, Ivan Michel Antolovic, Andrei Ardelean, Arin Can Ülkü
Simon Nessim Henein, Hubert Pierre-Marie Benoît Schneegans, Ilan Vardi, Mohamed Gamal Abdelrahman Ahmed Zanaty