Light induced etching of GaAs in a zinc atmosphere
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We demonstrate edge-emitting lasers based on self-assembled InAs quantum dots (QDs) on GaAs substrates. The InAs QDs are embedded in an InGaAs quantum well (QW) to red-shift the lasing transition. The lasers emit at lambda=1.2 mum with threshold current de ...
The Zn/Se flux ratio employed during the early stages of molecular beam epitaxy of pseudomorphic ZnSe/GaAs(001) as well as lattice-matched ZnSe/In0.04Ga0.96As(001) heterostructures controls the density of the native stacking faults, which have been associa ...
GaAS/GaAlAs heterostructure rib waveguide coupler with stepped [Triangle Open]β Schottky electrodes has been investigated by using ion-etching and lift-off mask techniques, and optimization design of device structure and lowering epitaxy layer carrier ...
An argon laser is used to induce Laser Chem. Vapor Deposition (LCVD) of platinum using platinum bihexafluoroacetylacetonate as precursor. The process can be photolytic or pyrolytic depending on the laser power used. These processes are studied by recording ...
In this paper we present briefly two possible approaches for modelling the laser cladding process. The first approach is 2D and consists in finding the shape of the molten pool given the fraction of the laser power which is available at the surface of the ...
The broad tunability (1-10 mum) and megawatt regime peak intensity available from the Vanderbilt Free-Electron Laser is opening new avenues in semiconductor research. Initial experiments in nonlinear optical absorption and heterojunction band-edge disconti ...
The present work is part of a feasibility study to investigate the excimer laser photon-assisted thermal decompn. of anthracene at 248 nm. The principle is to combine UV photons of an appropriate light source and heat in an incinerating reactor at modest t ...
A model which takes into account the main phenomena occurring during the laser-cladding process is proposed. For a given laser power, beam radius, powder jet geometry, and clad height, this model evaluates two other processing parameters, namely, the laser ...
The increase of the complexity in semiconductor structures raises more and more the need for local evaluation techniques. For example, laser structures with graded-index waveguides are now widespread, but the characterisation of the shape of the gradient i ...
A 351-363 nm wavelength argon laser is used to induce pyrolytic laser chem. vapor deposition of platinum, using platinum bishexafluoroacetylacetonate as a precursor. The deposit thicknesses and diams. are presented according to exposure time, precursor pre ...