Performance and Transient Behavior of Vertically Integrated Thin-film Silicon Sensors
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The present invention relates to a photodetector array for capturing image data, comprising: - photodetector cells arranged on a substrate, each including a single-photon avalanche diode, wherein the active areas of the photodetector cells are neighbored a ...
2021
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Fluoxetine (FL) is one of the selective serotonin reuptake inhibitors, which is used as an anti-depressant, as well as anti-panic drug. In this work, a sensor for label-free recognition of trace amounts of FL is introduced, which is based on an extended ga ...
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Single-photon avalanche diodes (SPADs) are novel image sensors that record the arrival of individual photons at extremely high temporal resolution. In the past, they were only available as single pixels or small-format arrays, for various active imaging ap ...
IEEE COMPUTER SOC2023
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This letter introduces a 5-transistors (5T) implementation of CMOS Image Sensors (CIS) pixels enabling the combination of deep sub-electronnoise performance with wide dynamic range (DR). The 5T pixel presents a new technique to reduce the sense node capaci ...
2020
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In this article, the impact of the combination of the column-level gain and the correlated multiple sampling (CMS) on the noise of CMOS image sensor (CIS) readout chains is first analyzed. The theory is then validated experimentally with CIS readout chains ...
2020
The low-light performance of a CMOS image sensor (CIS) is one of the most important performance metrics in a camera, whether it is used in products for consumer electronics or in an image-acquisition system for machine vision or the Internet-of-Things (IoT ...
The present invention relates to a pixel sensor cell (1) for a CMOS sensor device comprising: - a photodiode (11) for generating photoelectrons; - a first transfer transistor (12) coupling the photodiode (11) with an intermediate node (IN) and configured t ...
In this paper, we propose a physics-based compact model of the pinned photodiode (PPD) combined with the transfer gate. A set of analytical expressions is derived for the 2-D electrostatic profile, the PPD capacitance, and the charge transfer current. The ...