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In this paper, a solution to realize local oscillators (LO) for a low power super-heterodyne receiver is presented. The first oscillator uses a bulk acoustic wave (BAW) resonator with high Q-factor. A quasi- harmonic quadrature relaxation oscillator with l ...
This paper reports on an inductor fabrication method capable to deliver high quality factor (Q) and high self-resonance frequency (SRF) devices using quartz insulating substrates and thick high-conductivity copper lines. Inductors are key devices in RF cir ...
Single photon detection at telecom wavelengths is of importance in many industrial applications ranging from quantum cryptography, quantum optics, optical time domain reflectometry, non-invasive testing of VLSI circuits, eye-safe LIDAR to laser ranging. In ...
Following the trend in portable wireless communications, this dissertation explores new approaches to designing of power-critical building blocks in the elementary circuit level. Specifically, the work focuses on designs of baseband continuous-time Gm-C fi ...
Three different kinds of two-port flexural resonators, with both clamped and free ends, and with nominal resonance frequencies between 5 MHz and 50 MHz, were designed and fabricated. Among them, a novel free-free third-mode resonator, as well as a tunable ...
High-Q silicon membranes have been fabricated as resonator elements for excitation by magnetic direct generation of acoustic waves. Operating in the thickness shear mode, these inexpensive sensor elements are remotely excited by a planar spiral coil, drive ...
This paper reports on the fabrication and electrical characterization of a novel pressure sensor based on a suspended-gate MOSFET (SG-MOSFET) using a new polyimide process. The device is composed of a SG-MOSFET built on a thin SOI membrane released by a ba ...
Bandpass filters for microwave frequencies realized with thin film bulk acoustic wave resonators (FBAR) are a promising alternative to current dielectric or surface acoustic wave filters for use in mobile telecommunication applications. With equivalent per ...
This work was carried out in a collaborative framework between Ecole Polytechnique Fédérale de Lausanne and an industrial partner ST Microelectronics. RF MEMS passives are key devices for the RF front-end in modern transceiver and receiver architectures, o ...
The recent advances made in MEMS and particularly in RF MEMS technology are enabling new architectures for the integration of RF transceivers with improved performance and smaller size. Several fundamental building blocks benefit from the availability of h ...