Publications associées à Violet to orange room temperature luminescence from GaN quantum dots on Si(111) substrates

Dark-level trapping, lateral confinement, and built-in electric field contributions to the carrier dynamics in c-plane GaN/AlN quantum dots emitting in the UV range

Nicolas Grandjean, Raphaël Butté, Sebastian Pascal Tamariz Kaufmann

c-plane GaN/AlN quantum dots (QDs) are promising zero-dimensional quantum nanostructures that exhibit single photon emission properties up to room temperature and even above. In this context, it is of prime interest to gain a deeper insight into the recomb ...

AMER INST PHYSICS2021

GaN Quantum Dots for Room Temperature Excitonic Physics

Sebastian Pascal Tamariz Kaufmann

Quantum dots (QDs) are the result of quantum confinement in the three spatial directions, as such they exhibit remarkable properties, of which the most important is perhaps the absence of a continuum of states. The allowed energetic levels are discrete, si ...

EPFL2019

Density control of GaN quantum dots on AlN single crystal

Nicolas Grandjean, Gordon Jens Callsen, Sebastian Pascal Tamariz Kaufmann

Full control over the density and emission properties of GaN quantum dots (QDs) should be feasible, provided that the growth proceeds in the Stranski-Krastanov (SK) growth mode. In this work, we derive the phase diagram for GaN QD formation on AlN by NH3-m ...

2019

AlN grown on Si(111) by ammonia-molecular beam epitaxy in the 900-1200 degrees C temperature range

Nicolas Grandjean, Denis Martin, Sebastian Pascal Tamariz Kaufmann

We present a comprehensive study of AlN growth on Si(111) substrate by gas source molecular beam epitaxy with ammonia as nitrogen precursor in the high temperature range. We first demonstrate that the observation of the silicon 7 x 7 surface reconstruction ...

Elsevier2017

Controlled Charging of Ferroelastic Domain Walls in Oxide Ferroelectrics

Tomas Sluka, Li Jin, Ludwig Feigl, Xiankui Wei, Barbara Maraston Fraygola

Conductive domain walls (DWs) in ferroic oxides as device elements are a highly attractive research topic because of their robust and agile response to electric field. Charged DWs possessing metallic-type conductivity hold the highest promises in this aspe ...

Amer Chemical Soc2017

Compliant ferroelastic domains in epitaxial Pb(Zr, Ti)O-3 thin films

Nava Setter, Silviu Cosmin Sandu, Ludwig Feigl

Ordered patterns of highly compliant ferroelastic domains have been created by use of tensile strained epitaxial Pb(Zr, Ti)O-3 thin films, of very low defect density, grown on DyScO3 substrates. The effect of 180 degrees switching on well-ordered a/c 90 de ...

Amer Inst Physics2014

Dual-Color Electroluminescence from Dot-in-Bulk Nanocrystals

Christophe Marcel Georges Galland

The emission color from colloidal semiconductor nanocrystals (NCs) is usually tuned through control of particle size, while multicolor emission is obtained by mixing NCs of different sizes within an emissive layer. Here, we demonstrate that recently introd ...

Amer Chemical Soc2014

Three-dimensional nanoscale study of Al segregation and quantum dot formation in GaAs/AlGaAs core-shell nanowires

Anna Fontcuberta i Morral, Martin Heiss, Eleonora Russo, Sonia Conesa Boj, Luca Francaviglia, Yannik Fontana

GaAs/Al-GaAs core-shell nanowires fabricated by molecular beam epitaxy contain quantum confining structures susceptible of producing narrow photoluminescence (PL) and single photons. The nanoscale chemical mapping of these structures is analyzed in 3D by a ...

American Institute of Physics2014

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Violet to orange room temperature luminescence from GaN quantum dots on Si(111) substrates

Dark-level trapping, lateral confinement, and built-in electric field contributions to the carrier dynamics in c-plane GaN/AlN quantum dots emitting in the UV range

GaN Quantum Dots for Room Temperature Excitonic Physics

Density control of GaN quantum dots on AlN single crystal

The growth and optical properties of III-V nanostructures grown by Molecular Beam Epitaxy

Interaction between site-controlled quantum dot systems and photonic cavity structures

AlN grown on Si(111) by ammonia-molecular beam epitaxy in the 900-1200 degrees C temperature range

Controlled Charging of Ferroelastic Domain Walls in Oxide Ferroelectrics

Compliant ferroelastic domains in epitaxial Pb(Zr, Ti)O-3 thin films

Dual-Color Electroluminescence from Dot-in-Bulk Nanocrystals

Three-dimensional nanoscale study of Al segregation and quantum dot formation in GaAs/AlGaAs core-shell nanowires

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Chattez avec Graph Search

Dark-level trapping, lateral confinement, and built-in electric field contributions to the carrier dynamics in c-plane GaN/AlN quantum dots emitting in the UV range

GaN Quantum Dots for Room Temperature Excitonic Physics

Compliant ferroelastic domains in epitaxial Pb(Zr, Ti)O-3 thin films

AlN grown on Si(111) by ammonia-molecular beam epitaxy in the 900-1200 degrees C temperature range

The growth and optical properties of III-V nanostructures grown by Molecular Beam Epitaxy

Density control of GaN quantum dots on AlN single crystal

Three-dimensional nanoscale study of Al segregation and quantum dot formation in GaAs/AlGaAs core-shell nanowires

Interaction between site-controlled quantum dot systems and photonic cavity structures

Controlled Charging of Ferroelastic Domain Walls in Oxide Ferroelectrics

Dual-Color Electroluminescence from Dot-in-Bulk Nanocrystals