Inhomogeneous broadening of AlxGa1-xN/GaN quantum wells
Graph Chatbot
Chattez avec Graph Search
Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.
AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.
GaN/AlxGa1-xN quantum wells (QWs) are grown by molecular beam epitaxy (MBE) on c-plane sapphire substrates. Both the Al composition and the well thickness are determined in situ from reflection high-energy electron diffraction intensity oscillations. It is ...
Ammonia as nitrogen precursor has been used to grow m-V nitrides by molecular beam epitaxy (MBE) on c-plane sapphire substrates. The efficiency of NH3 has been evaluated allowing the determination of the actual V/III flux ratio used during the GaN growth. ...
Using femtosecond resonant luminescence, we have measured the intersubband scattering fare of electrons in wide GaAs quantum wells at very low excitation densities. Even when the spacing between the first two electron subbands is smaller than the LO phonon ...
Chemical beam epitaxy (CBE) grown InAsP/InGaAsP edge-emitting laser diodes on GaAs substrates obtained by localised fusion in a nitrogen environment exhibit high quality fused interfaces. A degradation of fused lasers is observed which is attributed to the ...
We report femtosecond pump and probe experiments in a semiconductor microcavity containing quantum wells. At high pump fields, the exciton-polariton Rabi doublet changes into a triplet structure. The triplet splitting increases as the square root of the in ...
Results are presented of both linear optical transmission and femtosecond four-wave mixing measurements, on a II-VI semiconductor microcavity into which three quantum wells have been inserted. The excitons (Xs) confined in the wells are strongly coupled to ...
Differences and analogies between disorder-induced localization and electric-field-induced localization are discussed. Calculations using a tight binding model and transfer matrix method for disordered superlattices are reported. Our results indicate the e ...
We show that the two-dimensional quantum confined Stark effect in a semiconductor quantum wire can display novel behaviour, i.e. wave function splitting and cascading. No analog to these phenomena can be found in bulk material or quantum wells. The consequ ...
Semiconductor quantum wires (QWRs) are promising structures for optoelectronics applications, since they can provide quantum confinement for charge carriers in two dimensions. The advantage that they offer over conventional quantum wells (QWs) is due to th ...
We report on microscopic photoluminescence and photoluminescence excitation of thin Al0.3Ga0.7As/GaAs quantum wells grown on exactly oriented (001) GaAs substrates. The experiments are done at low temperature by selectively exciting a few mu m(2) of the sa ...
