Progresses in III-nitride distributed Bragg reflectors and microcavities using AlInN/GaN materials
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We report on the development of electrochemical etching technology for the production of multilayer porous structures |(MPS) allowing one to fabricate Bragg reflectors on the basis of GaN bulk substrates grown by Hydride Vapor Phase Epitaxy |(HVPE). The fo ...
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Thin-wall tubes composed of nitride semiconductors (III-N compounds) based on GaN/InAlN multiple quantum wells (MQWs) are fabricated by metalorganic vapor-phase epitaxy in a simple and full III-N approach. The synthesis of such MQW-tubes is based on the gr ...
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Group III-nitrides have been considered a promising choice for the realization of optoelectronic devices since 1970. Since the first demonstration of the high-brightness blue light-emitting diodes (LEDs) by Shuji Nakamura and coworkers, the fabrication of ...
IIIV photonics on silicon is an active and promising research area. Here, we demonstrate room-temperature (RT) lasing in short-wavelength III-nitride photonic crystal nanobeam cavities grown on silicon featuring a single InGaN quantum well (QW). In the low ...
