GaN grown on (111) single crystal diamond substrate by molecular beam epitaxy
Graph Chatbot
Chattez avec Graph Search
Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.
AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.
Electrochemistry and biochemistry have always been ideal applications for diamond due to its chemical inertness and stability, sensitivity and biocompatibility. Several diamond ChemFET concepts have been proposed to date, however further improvements are s ...
We report on the growth by metalorganic vapor phase epitaxy of high-quality Al1-xInxN layers and AlInN/GaN Bragg mirrors near lattice matched to GaN. Layers are grown on a GaN buffer layer with no cracks over full 2 in. sapphire wafers. The index contrast ...
Gallium Nitride (GaN) and its ternary alloys with aluminium and indium have met a growing interest in the last decade. These semiconductors have a large direct bandgap and can be doped with either silicon (Si) for n-type and magnesium (Mg) for p-type layer ...
We have compared the In distribution in InGaN quantum wells grown by molecular beam epitaxy (MBE) and metalorganic vapor phase epitaxy (MOVPE). The samples were studied by conventional and high-resolution transmission electron microscopy (HRTEM). The local ...
We investigate both theoretically and experimentally the effects of the In surface segregation in InGaN/GaN quantum wells (QWs). It is shown that this phenomenon induces a blue-shift of the QW photoluminescence (PL) energy, which does not depend on the QW ...
The polarity of GaN epilayers grown by molecular beam epitaxy is controlled using Mg. This is achieved by simultaneously exposing the surface to Mg and NH3 fluxes during growth interruption. Reflection high-energy electron diffraction (RHEED) indicates the ...
We report on the growth by molecular-beam epitaxy on 2 in. sapphire substrates of crack-free AlxGa1-xN/GaN distributed Bragg reflectors (DBRs) with high-Al composition (x=0.5). This is achieved by introducing a thick AlN interlayer and strain mediating Aly ...
High mobility Al0.28Ga0.72N/GaN two-dimensional electron gas (2DEG) is achieved on ( 111) oriented single crystal diamond substrate. The surface morphology of the epilayer is free of cracks thanks to the use of an AlN interlayer for strain relaxation. The ...
AlGaN/GaN HEMTs have been fabricated directly on (111) oriented single crystal diamond with 1.3 x 10(13) cm(-2) channel sheet charge density and 731 cm(2)/Vs mobility. 0.2 mu m gate length devices showed 0.73 A/mm maximum drain current density and f(T) and ...
The subject of this work is focused on characterization of the microstructures and orientations of SiC crystals synthesized in diamond–SiC–Si composites using reactive microwave sintering. The SiC crystals grown on the surfaces of diamonds have either shap ...
