Publication
Suppression of leakage currents in GaN-based LEDs induced by reactive-ion etching damages
Publications associées (33)
Polarization-enhanced GaN Schottky barrier diodes: Ultra-thin InGaN for high breakdown voltage and low Ron
Elison de Nazareth Matioli, Alessandro Floriduz, Zheng Hao
In this work, we present a concept that leverages the strong piezoelectric polarization field in InGaN, which counteracts the external electric field at reverse bias. We show that despite the smaller InGaN band-gap and lower critical electric field, its st ...
2024III-N blue-emitting epi-structures with high densities of dislocations: Fundamental mechanisms for efficiency improvement and applications
Since the dawn of humanity, human beings seeked to light their surroundings for their well-being, security and development. The efficiency of ancient lighting devices, e.g. oil lamps or candles, was in the order of 0.03-0.04% and jumped to 0.4-0.6% with th ...
EPFL2024Deep defects in InGaN LEDs: modeling the impact on the electrical characteristics
Nicolas Grandjean, Jean-François Carlin, Camille Haller
Deep defects have a fundamental role in determining the electro-optical characteristics and in the efficiency of InGaN light-emitting diodes (LEDs). However, modeling their effect on the electrical characteristics of the LED is not straightforward. In this ...
SPIE-INT SOC OPTICAL ENGINEERING2022GaN vertical power devices on silicon substrates
Gallium Nitride (GaN) is a wonder material which has widely transformed the world by enabling
energy-efficient white light-emitting diodes. Over the past decade, GaN has also emerged as one
of the most promising materials for developing power devices which ...
EPFL2021Deep traps in InGaN/GaN single quantum well structures grown with and without InGaN underlayers
Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Mauro Mosca, Camille Haller
The electrical properties and deep trap spectra were compared for near-UV GaN/InGaN quantum well (QW) structures grown on free-standing GaN substrates. The structures differed by the presence or absence of a thin (110 nm) InGaN layer inserted between the h ...
ELSEVIER SCIENCE SA2020Multi-User Precoder Designs for RGB Visible Light Communication Systems
In this paper, we design linear precoders for the downlink of a visible light communication (VLC) system that simultaneously serves multiple users. Instead of using phosphor-coated white light-emitting diodes (PWLEDs), we focus on Red-Green-Blue light-emit ...
MDPI2020AlGaN/GaN Nanowires: from Electron Transport to RF Applications
Gallium Nitride (GaN) and all III-Nitride compounds have revolutionized the world with the development of the blue light emitting diode (LED). In addition, GaN-based epi-structures, such as AlGaN/GaN, enable the fabrication of high electron mobility transi ...
EPFL2020Electroluminescence of Single InGaN/GaN Micropyramids
Hua Zhang, Gwénolé Jean Jacopin
The results of the fabrication of technological regimes of formation and the study of the optical properties of light emitting diodes (LED) micropyramids based on InGaN/GaN are presented. The structures were formed by the method of Metalorganic vapour-phas ...
PLEIADES PUBLISHING INC2019Elucidating the role of the InGaN UL in the efficiency of InGaN based light-emitting diodes
Blue III-nitride light-emitting diodes (LEDs) are widely used nowadays in solid-state lighting, as white light can be produced by combining yellow phosphors and blue LEDs. This technology has the advantage to have a higher luminous efficiency than incandes ...
EPFL2019III-Nitride Semiconductor Photonic Nanocavities on Silicon
Optical nanocavities enhance light-matter interaction due to their high quality factors (Q) and small modal volumes (V). The control of light-matter interaction lies at the heart of potential applications for integrated optical circuits, including optical ...
EPFL2018