Publication
GaN-based laser diodes including a lattice-matched Al0.83In0.17N cladding layer
Publications associées (33)
Elucidating the role of the InGaN UL in the efficiency of InGaN based light-emitting diodes
Blue III-nitride light-emitting diodes (LEDs) are widely used nowadays in solid-state lighting, as white light can be produced by combining yellow phosphors and blue LEDs. This technology has the advantage to have a higher luminous efficiency than incandes ...
EPFL2019GaN surface as the source of non-radiative defects in InGaN/GaN quantum wells
Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Denis Martin, Gwénolé Jean Jacopin, Wei Liu, Camille Haller
Blue light-emitting diodes based on III-nitride semiconductors are nowadays widely used for solid-state lighting. They exhibit impressive figures of merit like an internal quantum efficiency close to 100%. This value is intriguing when considering the high ...
AMER INST PHYSICS2018Light-Matter Interaction in III-Nitride Waveguides: Propagating Polaritons and Optical Gain
III-nitride waveguides featuring AlInN claddings and GaN/AlGaN quantum wells (QWs) offer promising perspectives for applications in many fields of short-wavelength photonics. Thanks to their nearly lattice-matched nature, these structures exhibit an excell ...
EPFL2018InGaN laser diode with metal-free laser ridge using n(+)-GaN contact layers
Nicolas Grandjean, Antonino Francesco Castiglia, Marco Malinverni, Marco Rossetti, Denis Martin
We report on InGaN edge emitting laser diodes with a top metal electrode located beside the laser ridge. Current spreading over the ridge is achieved via a highly doped n(+)-type GaN layer deposited on top of the structure. The low sheet resistance of the ...
Iop Publishing Ltd2016Ultrafast spectroscopy of wide bandgap semiconductor nanostructures
Group III-nitrides have been considered a promising choice for the realization of optoelectronic devices since 1970. Since the first demonstration of the high-brightness blue light-emitting diodes (LEDs) by Shuji Nakamura and coworkers, the fabrication of ...
EPFL2015InGaN alloys and heterostructures
The III-nitride semiconductor material system - (InAlGa)N - is of highest interest for optoelectronic applications due to its direct bandgap, tunable from the ultraviolet to the infrared spectral range. The most well-known are white light-emitting diodes, ...
EPFL2014Low temperature p-type doping of (Al)GaN layers using ammonia molecular beam epitaxy for InGaN laser diodes
Nicolas Grandjean, Eric Feltin, Julien Dorsaz, Antonino Francesco Castiglia, Marco Malinverni, Jean-Michel Jacques Lamy, Denis Martin
We demonstrate state-of-the-art p-type (Al) GaN layers deposited at low temperature (740 degrees C) by ammonia molecular beam epitaxy (NH3-MBE) to be used as top cladding of laser diodes (LDs) with the aim of further reducing the thermal budget on the InGa ...
Amer Inst Physics2014