In this work we report an experimental study on accumulation-mode (AM) gate-all-around (GAA) nMOSFETs based on silicon nanowires with uniaxial tensile strain. Their electrical characteristics are studied from room temperature up to ~400 K and carrier mobility, flat-band and threshold voltages are extracted and investigated.
Simon Nessim Henein, Hubert Pierre-Marie Benoît Schneegans, Ilan Vardi, Mohamed Gamal Abdelrahman Ahmed Zanaty
Giovanni De Micheli, Mathias Soeken, Dewmini Sudara Marakkalage, Eleonora Testa, Heinz Riener
Edoardo Charbon, Claudio Bruschini, Ivan Michel Antolovic, Andrei Ardelean, Arin Can Ülkü