PN junction rectification in electrolyte gated Mg-doped InN
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A detailed analysis of capacitance behavior of high-voltage MOSFET (HV-MOS), for example, LDMOS, using device simulation is made. The impact of lateral nonuniform doping and drift region are separately analyzed. It is shown that the peaks in C-GD and C-GS ...
Today's world of electronics becomes more and more digital and therefore CMOS becomes the dominant technology. A CMOS process compared to a bipolar process offers several advantages, mainly a low power consumption which is important for portable systems po ...
Tunnelling experiments have played an essential role in the development and verification of theories for superconductivity. They are usually interpreted within the so-called semiconductor model, in which the tunnelling current is given by the convolution o ...
This work reports on the physical definition and extraction of threshold voltage in Tunnel FETs based on numerical simulation data. It is shown that the Tunnel FET has the outstanding property of having two threshold voltages: one in terms of gate voltage, ...
we report a new single photon avalanche diode (SPAD) implemented in a commercially available high-voltage CMOS technology. The SPAD was designed with relatively low-doped layers to form p-/n- junction, instead of commonly adopted p+/n- or n+/p- structures. ...
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Boltzmann electron energy distribution poses a fundamental limit to lowering the energy dissipation of conventional MOS devices, a minimum increase of the gate voltage, i.e. 60 mV, is required for a 10-fold increase in drain-to-source current at 300 K. Neg ...
In this work, a detailed analysis of capacitance behavior of high voltage MOSFET (HV-MOS) e.g. LDMOS, VDMOS using device simulation is made. The impact of lateral non-uniform doping and drift region is separately analyzed. It is shown that the peaks in C-G ...