Comparison of Lead Zirconate Titanate Thin Films for Microelectromechanical Energy Harvester With Interdigitated and Parallel Plate Electrodes
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The self-polarization effect is investigated in Pb(Zr,Ti)O-3 (PZT) thin films deposited by sol-gel and magnetron sputtering techniques. The effective piezoelectric coefficient of as-grown films, which is proportional to their initial polarization (self-pol ...
A surprising non-cumulative effect of the degradation mechanism (fatigue) of the switched polarization (P-r(s)), was observed in MOCVD and sol-gel prepared Pb(Zr0.47Ti0.53)O-3 (PZT) ferroelectric thin films capacitors (FECAP) with Pt-electrodes. This effec ...
PZT thin films for memory applications are known to lack sufficient resistance versus polarization fatigue when used together with platinum. One possible solution for this problem is to use conductive oxides like La1-xSrxCoO3 (LSCO) as an electrode. In thi ...
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Two W protection schemes for direct-contact bottom electrodes for PZT thin films, namely RuO2/Cr and RuO2/Ru, were compared with respect to protective performance and contact resistance up to 800 degrees C annealing temperature in oxygen. Cr clearly offers ...
Piezoelectric and dielectric aging was studied in Pb(Zr,Ti)O-3 (PZT) thin films and bulk ceramics. It was found that piezoelectric aging in thin films obeys the logarithmic time dependence with the relative aging rate much higher than that of the dielectri ...
We demonstrate the implementation of a thin film pyroelectric array as a detector in an infrared gas spectrometer. The 1 x 50 element array is integrated onto a silicon chip with a sol-gel deposited zirconium modified lead titanate film (PZT) as the pyroel ...
The effects of niobium doping on the hysteresis parameters of sol-gel Pb-1.1-x/2(Zr0.53Ti0.47)(1-x)NbxO3 (0 < x < 0.05) have been reported fbr two sets of films with analogous grain size and degree of (111) texture but with different surface microstructure ...
Through the use of relations analogous to that of the Rayleigh law, it is demonstrated that the ac electric field dependence of the permittivity of ferroelectric thin films can be described. It is further shown that both reversible and irreversible compone ...
